【大学化学】doi: 10.12461/PKU.DXHX202404041
在多年的实践过程中,针对本科化学实验教学面临的种种挑战,郑州大学化学实验教学中心多效并举,形成了一系列特色鲜明的教学管理方法,有效服务了高质量化学实验教学工作的开展。本文介绍了郑州大学化学实验教学中心建设中的一些举措和取得的成效,希望能为高校化学实验教学工作和管理服务提供有益的参考借鉴。
【无机化学学报】doi: 10.11862/CJIC.20240394
Herein, a one-pot chemical reduction method was reported to prepare folic acid (FA)-stabilized silver nanoclusters (FA@Ag NCs), in which FA, hydrazine hydrate, and silver nitrate were used as capping agent, reducing agent, and precursor, respectively. Several technologies were employed to investigate the structures and optical properties of FA@Ag NCs, including transmission electron microscopy (TEM), X ray photoelectron spectrometer (XPS), Fourier transform infrared spectrometer (FTIR), X-ray diffractometer (XRD), fluorescence spectrometer, and ultraviolet visible absorption spectrometer. FA@Ag NCs were suggested to be highly dispersed and spherical with a size of around 2.8 nm. Moreover, the maximum excitation and emission wavelengths of FA@Ag NCs were 370 and 447 nm, respectively. Under the optimal detection conditions, FA@Ag NCs could be used to effectively detect malachite green with the linear detection range of 0.5-200 μmol·L-1. The detection limit was 0.084 μmol·L-1. The fluorescence-quenching mechanism was ascribed to the static quenching. The detection system based on FA@Ag NCs was successfully used for the detection of malachite green in actual samples with good accuracy and reproducibility.
【无机化学学报】doi: 10.11862/CJIC.20240390
This paper delves into the theoretical mechanisms of the electronic structure and optical properties of aluminum-based semiconductors (AlX, X=N, P, As, Sb) and indium-based semiconductors (InX, X=N, P, As, Sb) as potential materials for optical devices. Band structure calculations reveal that, except for InSb, all other compounds are direct bandgap semiconductors, with AlN exhibiting a bandgap of 3.245 eV. The valence band maximum of these eight compounds primarily stems from the p-orbitals of Al/In and X. In contrast, the conduction band minimum is influenced by all orbitals, with a predominant contribution from the p-orbitals. The static dielectric constant increased with the expansion of the unit cell volume. Compared to AlX and InX with larger X atoms, AlN and InN showed broader absorption spectra in the near-ultraviolet region and higher photoelectric conductance. Regarding mechanical properties, AlN and InN displayed greater shear and bulk modulus than the other compounds. Moreover, among these eight crystal types, a higher modulus was associated with a lower light loss function value, indicating that AlN and InN have superior transmission efficiency and a wider spectral range in optoelectronic material applications.