Citation: Zhong hua LIN, Hai yi CHEN, Zhaowu TIAN. SEMICONDUCTING PROPERTIES OF In2O₃ ANODIC FILM[J]. Chinese Chemical Letters, ;1990, 1(3): 275-276. shu

SEMICONDUCTING PROPERTIES OF In2O₃ ANODIC FILM

NATIONAL LABORATORY OF PHYSICAL CHEMISTRY OF SOLID SURFACE XIAMEN UNIVERSITY XIAMEN 361005

Received Date: 22 March 1990

The good potentiality of the In2O₃ anodic film as a photoanodic material has been demonstrated.The anodic oxidation of In substrate in alkaline solution for obtaining In₂O₃ film has been developed and their semiconducting properties have been investigated through capacitance, photoelectrochemistry and electroreflection measurements.
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