Citation: Zi Li ZHAN, Deng Gao JIANG, Jia Qiang XU. Enhancement of H₂ Sensing Properties of In₂O₃-based Gas Sensor by Chemical Modification with SiO₂[J]. Chinese Chemical Letters, ;2004, 15(12): 1509-1512. shu

Enhancement of H₂ Sensing Properties of In₂O₃-based Gas Sensor by Chemical Modification with SiO₂

1.
School of Chemical Engineering, Zhengzhou University, Zhengzhou 450002;
2.
Department of Chemical Engineering, Zhengzhou Institute of Light Industry, Zhengzhou 450002

Received Date: 27 October 2003

Fund Project: This project is supported by the key technology research foundations of Henan province (No. 0423021700).

The sensitivity and selectivity to H₂ of a new In₂O₃-based gas sensor were improved significantly by surface chemical modification. A dense layer of SiO₂ near the surface of the porous In₂O₃ bead was formed by chemical vapor deposition (CVD) of diethoxydimethysilane (DEMS).The dense layer functioned as a molecular sieve, thereby the diffusion of gases with large molecular diameters, except for H₂, was effectively controlled, resulting in a prominent selectivity and high sensitivity for H₂. The working mechanism of the sensor was also presented.
- H₂gas sensor,
- indium oxide,
- molecular sieve
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