Citation: Feng YIN, Xue Ping LI, Zhen Zong ZHANG, Tie Feng CHEN, Xu Rui XIAO. Investigation of HNO₃ Chemincally Oxidized Porous Silicon[J]. Chinese Chemical Letters, ;1996, 7(11): 1037-1038. shu

Investigation of HNO₃ Chemincally Oxidized Porous Silicon

Instiute of photographic Chemistry,Academia Sinica Beijing 100101

Received Date: 16 July 1996

The stability of the photoluminescence(PL)from porous silicon(PS)has evidently improved by HNO₃ chemical oxidation.The PL intensity and peak wavelength of PS were changed with the increase of HNO₃ concentration and oxidation time.Being different from other oxidized ways,the PS oxidized by HNO₃ remains sensitive to adsorbates.PTIR spectroscopic data suggest that these phenomena are attributed to the presence of HSi(Si_aO_3-a)(a≤3)layer on PS surface.
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