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Citation: Cui Qiming, Jiang Zhiyu, Yu Zuzhan, Ying Zhifeng. Laser-Induced Partial Deposition of Pt on p-Silicon Wafers[J]. Chinese Journal of Applied Chemistry, ;1998, 15(4): 104-106. shu

Laser-Induced Partial Deposition of Pt on p-Silicon Wafers

1.
Department of Chemistry, Fudan University, Shanghai 200433;
2.
Department of Physics, Fudan University, Shanghai 200433

Received Date: 4 November 1997
Revised Date: 23 March 1998

The partial deposit films on p-silicon wafers were formed from three kinds of plating solution:chloro-platinic acid, potassium tetranitroplatinate and diammine platinium dinitrate under Nd:YAG laser irradiation. The compositions and properties of the deposits were investigated by AES, SEM and XPS techniques. The Pt deposits have ohmic contact with p-type silicon.
- platinium plating,
- laser induced deposition,
- p-silicon
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