Citation: Yao LIU, Yuan LIN, Xu Rui XIAO, Xue Ping LI, Hai Qun ZHENG, Yi Ping ZENG, Dian Zhao SUN. TRANSIENT PHOTOCURRENT INVESTIGATION OF PHOTO PROCESSES OF LATTICE-MATCHED MQW GaAs/As_XGa_1-XAs ELECTRODE[J]. Chinese Chemical Letters, ;1995, 6(9): 795-796. shu

TRANSIENT PHOTOCURRENT INVESTIGATION OF PHOTO PROCESSES OF LATTICE-MATCHED MQW GaAs/As_XGa_1-XAs ELECTRODE

a The Center of Photoelectrochemistry, Institute of Photopohic Chemistry Academia Sinica, Beijing 100101;
b Institute of Semiconductors, Academa Sinica, Beijing 100083

Received Date: 19 July 1994

Fund Project: This work was supported by the National Natural Science Foundation of China.

Transient photocurrents induced by short light pulses at lattice-matched GaAs/Al_xGa_1-xAs multiple quantum well (MQW) electrodes were studied as a function of elelctrode potential.Dual exponential photocurrent decay transients were observed at various potentials.By analysis of the dual exponential decay transients, information on steady state photocurrents (I_S), surface collection of photoexcited minority carriers (G₀) and lifetimes of surface states (T_S) was obtained.The kinetic behaviors of photoprocesses at illuminated MQW/electrolyte interface were discussed.
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