Citation: Gong Qun SUN, Zheng TAN. PHOTOANODIC CHARACTERISTICS OF LAYER-STRUCTURED n-InSe IN POLYSULFIDE SOLUTION[J]. Chinese Chemical Letters, ;1991, 2(2): 161-162. shu

PHOTOANODIC CHARACTERISTICS OF LAYER-STRUCTURED n-InSe IN POLYSULFIDE SOLUTION

Gong Qun SUN ,
Zheng TAN

Changchun Institute of Applied Chemistry, Academia Sinica, Changchun 130022

Received Date: 27 April 1990

Fund Project: Acknowledgement is given to the Commission of National Natural Science Foudation for financial support.

The photoanodic characteristics of layer-structured n-InSe were investigated in polysulfide solution as a solid-liquid junction photoelectro-chemical cell (PEC). A quantum yield approaching about 90% and a photocurrentdensity as high as 30 mA/cm² were obtained. But the stabilization experiment demonstrates that about 8% of the photocurrent is attributed to a photoanodic corrosion ceaction.
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