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Citation: Xu Mingxia, Xu Tingxian, Liu Ning. Preparation and Properties of TiO₂ Semiconductor Film[J]. Chinese Journal of Applied Chemistry, ;1996, 13(5): 61-63. shu

Preparation and Properties of TiO₂ Semiconductor Film

1.
Department of Materials Science and Engineering, Tianjin University, Tianjin 300072

Received Date: 25 December 1992
Available Online: 24 April 1996
Fund Project:

The TiO₂ semiconductor film on Al₂O₃ and glass substrates was prepared by homogeneous precipitation with titanyl sulfate and urea as raw materials. Under low concentration of TiOSO₄ the increase of urea concentration could accelerate the formation of the film.The thickness of the film prepared at 70~80℃ for 1 h and calcined at 600℃ for 0.5 h (1 cycle) was over 0.2 μm while the thickness obtained by 4 cycles was over 0.8μm. The adhesion of the film was good. After calcining at 1000℃ for 0.5 h in H₂ the film was crystallized into rutile phase having a square resistance of 1.3×10⁴ Ω/□.
- TiO₂,
- semiconductor film,
- preparation
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Preparation and Properties of TiO₂ Semiconductor Film