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Citation: Zhang Guoqing, Liu Bing, Yao Suwei, Guo Hetong, Gong Zhenglie. Electrochemical Preparation of Ni-Pd Film on p-type Silicon and Its Characterization[J]. Chinese Journal of Applied Chemistry, ;1997, 14(2): 20-23. shu

Electrochemical Preparation of Ni-Pd Film on p-type Silicon and Its Characterization

1.
1. Department of Applied Chemistry, Tianjin University, Tianjin 300072;
2.
2. Tianjin Institute of Technology, Tianjin

Received Date: 20 June 1996
Available Online: 25 November 1996
Fund Project:

Nickel-palladium alloy film was prepared on p-type silicon using potential-controlled electrodeposition. Cathodic deposition and anodic stripping behavior were investigated as well. The influence of polarization style on the composition, thickness, morphology and structure of film was studied by means of energy dispersive X-ray analysis, X-ray diffraction (XRD) and scanning electron microscope(SEM). SEM showed that at the initial stage nickel-palladium forms a layered structure, with the film growing and the polarization enhanced, an island growth was found. XRD indicated that nickel-palladium alloy has a face-centered cubic structure and the distance between crystal planes changes with the composition of deposit.
- nickel-palladium alloy,
- electrodeposition,
- p-type silicon
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Electrochemical Preparation of Ni-Pd Film on p-type Silicon and Its Characterization

南开大学师唯/华北电力大学（保定）刘景维：二维配位聚合物中有序的亲锂冠醚位点用于无枝晶锂沉积

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通讯作者: 陈斌, bchen63@163.com