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Citation: Wang Baohui, Wang Dejun, Li Tiejin, Geng Xinhua, Lin Shiguo, Sun Yun, Sun Zhonglin. Li⁺ Ion Implantation into a-Si: H Film under Inducement of Electric Field and the Photovoltalc Property[J]. Chinese Journal of Applied Chemistry, ;1995, 12(1): 5-8. shu

Li⁺ Ion Implantation into a-Si: H Film under Inducement of Electric Field and the Photovoltalc Property

1.
1. Departmet off Chemistry, Jilin University, Changchun 130023;
2.
2. Institute of Photoelectron, Nankai University, Tianjin

Received Date: 21 March 1994
Available Online: 30 June 1994
Fund Project:

lmplantation of Li⁺ ions into hydrogenated amorphous silicon (a-Si:H) film under inducement of electric field has been investigated by photoelectrochemical teehnique and sur-face photovoltaic spectroscopy (SPS).The results show that implantation could take place under less than-0.60V(vs.SCE)in a-Si:Hfilm.The photovoItaic response of the implant-ed film increases by about 60% compared with that of the non-implanted film.
- hydrogenated amorphous silicon film,
- Li⁺ ion implantation,
- ohotovoltage re-sponse
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Li+ Ion Implantation into a-Si: H Film under Inducement of Electric Field and the Photovoltalc Property

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Li⁺ Ion Implantation into a-Si: H Film under Inducement of Electric Field and the Photovoltalc Property