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Citation: Liu Bing, Yao Suwei, Guo Hetong, Yuan Huatang, Zhang Yunshi. Ni-Pd-P Film Electrodeposited on Semiconductor Silicon and Its Structure[J]. Chinese Journal of Applied Chemistry, ;1999, 16(1): 16-20. shu

Ni-Pd-P Film Electrodeposited on Semiconductor Silicon and Its Structure

1.
a Institute of New Energy Material Chemistry, Nankai University, Tianjin 300071;
2.
b College of Chemical Engineering, Tianjin University, Tianjin

Received Date: 13 July 1998
Available Online: 9 November 1998
Fund Project: 国家自然科学基金资助项目(69478012) (69478012)

Ni-Pd-P film was formed on semiconductor silicon by potential controlled electrodeposition technique. Results showed that addition of H₃PO₃ improved the deposition of Ni and P. With increase of pH of the plating solution, the content of Ni was increased and the Pd and P contents were decreased. The composition of P had a great effect on the inter stress of the film. Many cracks were found on the surface of the film containing 1.49% P, but they disappeared entirely when the P content was 3.50%. Deposit containing lower than 2% P was a solid solution with fcc structure. The structure changed from crystal to amorphous when P content was higher than 4%.
- semico nductor silicon,
- NiPd-P film,
- electrodeposition,
- structure
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