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Citation: ZHU Wen, YANG Jun-You, GAO Xian-Hui, HOU Jie, BAO Si-Qian, FAN Xi-An. Preparation of Bismuth Telluride Thin Film by Electrochemical Atomic Layer Epitaxy[J]. Chinese Journal of Applied Chemistry, ;2005, 22(11): 1167-1171. shu

Preparation of Bismuth Telluride Thin Film by Electrochemical Atomic Layer Epitaxy

1.
State Key Laboratory of Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074

Corresponding author: YANG Jun-You,
Received Date: 26 December 2004
Available Online: 18 May 2005
Fund Project: 国家基础研究计划(2004CCA03200) (2004CCA03200)国家自然科学基金(50401008) (50401008)

Thin-layer electrochemical studies of the underpotential deposition(UPD) of Bi and Te on cold rolled silver substrate have been performed.The voltammetric analysis of the underpotential shift demonstrated that the initial Te UPD on Bi-covered Ag and Bi UPD on Te-covered Ag fitted UPD dynamics mechanism.Thin film of bismuth telluride was formed by alternately depositing Te and Bi via an automated flow deposition system.X-ray diffraction indicated the deposits of Bi₂Te3.EDX quantitative analysis gave a 2:3 stoichiometric ratio of Bi to Te,which was consistent with XRD result.Electron probe microanalysis of the deposits showed a network structure that resulted from the surface defects of the cold rolled Ag substrate and the lattice mismatch between substrate and deposit.
- electrochemical atomic layer epitaxy,
- underpotential deposition,
- bismuth telluride,
- thermoelectric thin film
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