Citation: Zheng Li, Guizhou Gu, Shaozheng Hu, Xiong Zou, Guang Wu. Promotion of activation ability of N vacancies to N₂ molecules on sulfur-doped graphitic carbon nitride with outstanding photocatalytic nitrogen fixation ability[J]. Chinese Journal of Catalysis, ;2019, 40(8): 1178-1186. doi: S1872-2067(19)63364-4 shu

Promotion of activation ability of N vacancies to N₂ molecules on sulfur-doped graphitic carbon nitride with outstanding photocatalytic nitrogen fixation ability

Zheng Li ^a, ,
Guizhou Gu ^a ,
Shaozheng Hu ^a ,
Xiong Zou ^c ,
Guang Wu ^b

a College of Chemistry, Chemical Engineering and Environmental Engineering, Liaoning Shihua University, Fushun 113001, Liaoning, China;
b School of Chemistry, Chemical Engineering and Materials, Research Institute of Crop Science, Heilongjiang University, Harbin 150080, Heilongjiang, China;
c School of Chemical Engineering, Dalian University of Technology, Dalian 116012, Liaoning, China

Received Date: 4 March 2019
Revised Date: 28 March 2019

Fund Project: This work was supported by the National Natural Science Foundation of China (41701364), the Liaoning Doctoral Priming Fund Project (201601333, 20170520109), the Basic Scientific Research in Colleges and Universities in Heilongjiang Province (KJCXZD201715), and the Harbin Science and Technology Bureau Project (2017RAQXJ145). The DFT calculations are supported by Super Computing Center of Dalian University of Technology.

Nitrogen vacancies and sulfur co-doped g-C₃N₄ with outstanding N₂ photofixation ability was synthesized via dielectric barrier discharge plasma treatment. X-ray diffraction, ultraviolet-visible spectroscopy, N₂ adsorption, scanning electron microscopy, X-ray photoelectron spectroscopy, photoluminescence spectroscopy, and temperature-programmed desorption were used to characterize the as-prepared catalyst. The results showed that plasma treatment cannot change the morphology of the as-prepared catalyst but introduces nitrogen vacancies and sulfur into g-C₃N₄ lattice simultaneously. The as-prepared co-doped g-C₃N₄ displays an ammonium ion production rate as high as 6.2 mg·L^-1·h^-1·g_cat^-1, which is 2.3 and 25.8 times higher than that of individual N-vacancy-doped g-C₃N₄ and neat g-C₃N₄, respectively, as well as showing good catalytic stability. Experimental and density functional theory calculation results indicate that, compared with individual N vacancy doping, the introduction of sulfur can promote the activation ability of N vacancies to N₂ molecules, leading to promoted N₂ photofixation performance.
- Graphitic carbon nitride,
- Nitrogen photofixation,
- Co-doping,
- Photocatalysis,
- Plasma treatment
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Promotion of activation ability of N vacancies to N2 molecules on sulfur-doped graphitic carbon nitride with outstanding photocatalytic nitrogen fixation ability

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Promotion of activation ability of N vacancies to N₂ molecules on sulfur-doped graphitic carbon nitride with outstanding photocatalytic nitrogen fixation ability