Citation: Jiang Dan-Ni, Yan Kang-Rong, Li Chang-Zhi. Doping of Organic Semiconductors with Lewis Base Anions: Mechanism, Applications and Perspectives[J]. Acta Chimica Sinica, ;2020, 78(12): 1287-1296. doi: 10.6023/A20080342 shu

Doping of Organic Semiconductors with Lewis Base Anions: Mechanism, Applications and Perspectives

Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, China

Corresponding author: Li Chang-Zhi, czli@zju.edu.cn
Received Date: 2 August 2020
Available Online: 4 September 2020
Fund Project: Zhejiang Natural Science Fund for Distinguished Young Scholars LR17E030001Project supported by the National Natural Science Foundation of China (Nos. 21722404, 21674093), and Zhejiang Natural Science Fund for Distinguished Young Scholars (No. LR17E030001)the National Natural Science Foundation of China 21722404the National Natural Science Foundation of China 21674093

Figures(8)

Doping is an effective method to improve the carrier densities and charge transport capabilities of organic semiconductors. In recent years, n-doping of organic semiconductors via Lewis base anions has attracted much attentions of researchers, which takes place under mild condition and controllable fashion, hence exhibiting broad applications in optoelectronics. This perspective focuses on discussing the mechanism of anion-induced electron transfer to semiconductors, summarizing its recent progresses in interfacial materials and doped active layers for optoelectronic devices, as well as analyzing the future development of this field.
- Lewis base anions,
- n-doping,
- anion-π interaction,
- interfacial materials,
- dopant
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