Citation: Cui Bin-Bin, Tang Jian-Hong, Zhong Yu-Wu. Resistive Memory Materials Based on Transition-Metal Complexes[J]. Acta Chimica Sinica, ;2016, 74(9): 726-733. doi: 10.6023/A16080384 shu

Resistive Memory Materials Based on Transition-Metal Complexes

Cui Bin-Bin ^a,b ,
Tang Jian-Hong ^a,b ,
Zhong Yu-Wu ^a,b,*,,

a.
CAS Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190
b.
College of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing 100049

Corresponding author: Zhong Yu-Wu, zhongyuwu@iccas.ac.cn
Received Date: 2 August 2016

Fund Project: the National Natural Science Foundation of China 21501183the Ministry of Science and Technology of China 2012YQ120060the National Natural Science Foundation of China 21472196the Strategic Priority Research Program of the Chinese Academy of Sciences XDB 12010400the National Natural Science Foundation of China 21521062the National Natural Science Foundation of China 21271176

Figures(14)

A resistive memory operates as an electrical switch between high and low conductivity states (or multistates) in response to an external electric field. Due to the high capacity, high flexibility, good scalability, low cost, and low power consumption, resistive memory is promising for the next-generation high-density data storage. In addition to inorganic metal oxides, carbon nanomaterials, organic small molecular and polymeric semiconductor materials, transition-metal complexes have recently received much attention as active materials for resistive memory. In this contribution, the applications of transition-metal complexes in resistive memory reported to date are summarized and discussed, mainly including group VⅢ [Fe(Ⅱ), Ru(Ⅱ), Co(Ⅲ), Rh(Ⅲ), Ir(Ⅲ), and Pt(Ⅱ) complexes], group IB and ⅡB [Cu(Ⅱ), Au(Ⅲ), and Zn(Ⅱ) complexes], and lanthanide complexes [mainly Eu(Ⅲ) complexes]. The memory behavior and mechanism of these materials will be discussed. Transition-metal complexes often possess well-defined and reversible redox processes. The frontier energy levels and gaps can be easily modulated by changing the structures of ligands and metal species, which is beneficial for generating electrical bistates or multistates when they are used in resistive memory devices. These features make transition-metal complexes potentially useful as memory materials in practical applications.
- resistive memory,
- information storage,
- transition-metal complexes,
- optoelectronic devices,
- optoelectronic materials
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