Citation: SUN Xia-Wei, TAN Jin, LI Cong-Ming, LEI Ting, MENG Xiao-Kang, YAN Wei, ZHANG Wei, FENG Shan. Doping Effects of Sb, Bi, Zr and Si on the Properties of YAG:Ce Phosphor[J]. Chinese Journal of Inorganic Chemistry, ;2013, 29(9): 1863-1869. doi: 10.3969/j.issn.1001-4861.2013.00.241
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The Sb3+, Bi3+, Zr4+ and Si4+ doped YAG:Ce yellow phosphors were synthesized by high temperature solid-state method. The doping effect and the related mechanism of Sb3+, Bi3+, Zr4+ and Si4+ on the luminescence intensity of YAG:Ce were studied. The results show that the luminescence intensity firstly increases with the increases of the Sb3+, Bi3+, Zr4+ and Si4+ concentration, then decreases. The energy transfer from Sb3+ and Bi3+ to Ce3+ took the mechanism of the multipolar interactions, which leads the improvements of the emission intensity about 35.5% at 0.5 mmol for Sb3+ and 44.8% at 0.1 mmol for Bi3+, respectively. The additions of Zr4+ and Si4+ promote further reduction of Ce4+ to Ce3+, owing to spontaneous charge compensation. The highest emission intensity is obtained at the concentrations of Zr4+ and Si4+ of 0.3 mmol and 7 mmol, which is increased by 27.4% and 31.2%, respectively. With the doping of Sb3+, Bi3+, Zr4+ and Si4+ elements, the growth of phosphor particle is improved, resulting in the enhancement of phosphors emission.
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