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Citation: PENG Yong, DING Shi-Hua, SONG Tian-Xiu, WANG Jiu-Shi, XU Qin, WU Xiao-Liang. Dielectric Properties, Relaxor Behavior and Crystal Chemistry Properties of Ba0.98Bi0.02(Ti0.9Zr0.1)1-xCuxO3 Ceramics[J]. Chinese Journal of Inorganic Chemistry, ;2013, 29(7): 1400-1406. doi: 10.3969/j.issn.1001-4861.2013.00.197 shu

Dielectric Properties, Relaxor Behavior and Crystal Chemistry Properties of Ba0.98Bi0.02(Ti0.9Zr0.1)1-xCuxO3 Ceramics

  • 1.

    College of Materials Science & Engineering, Xihua University, Chengdu 610039, China

  • Received Date: 27 December 2012
    Available Online: 30 January 2013

    Fund Project: 国家自然科学基金(No.11074203) (No.11074203)西华大学研究生创新基金(No.YCJJ201258)资助项目。 (No.YCJJ201258)

  • Ba0.98Bi0.02(Ti0.9Zr0.1)1-xCuxO3(x=0, 0.01, 0.02, 0.03) were prepared by conventional solid-state reaction methods. The effect of Bi3+ as donor doping in A-site and Cu2+ as acceptor doping in B-site on structure and dielectric properties were investigated by XRD, LCR and other techniques. The results revealed that when x=0.03, the second phase occurred. The order of the defect dipoles stability from low to high is [2BiBa·+VBa"]、[2BiBa·+CuTi/Zr"], [CuTi/Zr"+Vo··] by GULP. Combined with the experiments, the analysis shown that the relaxation degree were closely related to the variety of defect dipoles, when x=0.01, the defect dipoles [2BiBa·+CuTi/Zr"] were dominant. With increasing Cu2+ content, the dielectric constants increased, and the dielectric constants were inversely proportional to the bond valance sum of B-site and proportional to the varieties of octahedral BO6 volume.
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