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Citation: Mengshi Yu, Congwei Tan, Xiaoyin Gao, Junchuan Tang, Hailin Peng. Chemical Vapor Deposition Growth of High-Mobility 2D Semiconductor Bi2O2Se: Controllability and Material Quality[J]. Acta Physico-Chimica Sinica, ;2023, 39(10): 230604. doi: 10.3866/PKU.WHXB202306043 shu

Chemical Vapor Deposition Growth of High-Mobility 2D Semiconductor Bi2O2Se: Controllability and Material Quality

  • Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China

  • Corresponding author: Hailin Peng, hlpeng@pku.edu.cn
    • †These authors contributed equally to this work.
  • Received Date: 26 June 2023
    Revised Date: 19 July 2023
    Accepted Date: 21 July 2023
    Available Online: 7 August 2023

    Fund Project: the National Natural Science Foundation of China 21920102004the National Natural Science Foundation of China 22205011the National Natural Science Foundation of China 92164205National Key Research & Development Program 2021YFA1202901Beijing National Laboratory for Molecular Sciences BNLMS-CXTD-202001the Tencent Foundation 探索者奖

  • Two-dimensional (2D) semiconductors offer an atomic thickness that facilitates superior gate field penetration and enables transistors to maintain shrinking with suppressed short-channel effects, thereby being considered as channel materials for future transistors in the post-Moore era. As a member of high-mobility 2D semiconductors, the air-stable Bi2O2Se with a moderate bandgap has drawn significant attention. Distinguished from other 2D materials, Bi2O2Se can be oxidized layer-by-layer to form a high-k native-oxide dielectric, Bi2SeO5, with an atomically sharp interface, similar to Si/SiO2 in the semiconductor industry. These characteristics make Bi2O2Se an ideal material platform for fabricating various devices with excellent performance, such as transistors, thermoelectrics, optoelectronics, sensors, flexible devices and memory devices. To realize advanced applications of 2D Bi2O2Se, it is essential to develop scalable and high-quality preparation methods with relatively low cost. Chemical vapor deposition (CVD) has shown promise in meeting these requirements. Over the past years, CVD has been widely used to synthesize 2D Bi2O2Se despite some remaining challenges. In this review, we summarize the recent progress in the controlled growth of 2D Bi2O2Se via the CVD method. We begin by introducing the crystal structure and properties of Bi2O2Se. Next, we focus on the morphology control of 2D Bi2O2Se, including various nucleation modes and different dimensionalities by carefully manipulating the CVD process. In terms of nucleation modes, in-plane and vertical epitaxial growth of Bi2O2Se, achieved by controlling the interaction between epitaxial layer and substrate, are reviewed. Wafer-scale continuous Bi2O2Se film facilitates the device integration while vertical 2D fins pave the way for fabricating high-performance fin field-effect-transistors (FinFET). As for the dimensionality control, the transition from 2D nanoplates to 1D nanoribbons is investigated. Parameters such as precursor ratio, growth temperature and types of catalyst play a key role in such transition. We then discuss the construction of ordered arrays of Bi2O2Se with the above morphology by selective growth and post treatment for potential device integration. In addition, we highlight the electrical quality improvement of the grown material via defect control and strain release. For example, both the Se poor growth condition and the out-of-plane strain-free growth contribute to higher mobility of Bi2O2Se. Lastly, we propose potential strategies for precise control of Bi2O2Se structures and quality. In order to meet the demands of advanced electronic applications, more efforts are expected to made to achieve uniform, transferable and site-specific preparation of high-quality single-crystal Bi2O2Se on a large scale.
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