Citation: Junhao Liao, Yixuan Zhao, Zhaoning Hu, Saiyu Bu, Qi Lu, Mingpeng Shang, Kaicheng Jia, Xiaohui Qiu, Qin Xie, Li Lin, Zhongfan Liu. Crack-Free Transfer of Graphene Wafers via Photoresist as Transfer Medium[J]. Acta Physico-Chimica Sinica, ;2023, 39(10): 230603. doi: 10.3866/PKU.WHXB202306038 shu

Crack-Free Transfer of Graphene Wafers via Photoresist as Transfer Medium

Junhao Liao ^{1, 2, 3, 4} ,
Yixuan Zhao ^{1, 3} ,
Zhaoning Hu ^{3, 5} ,
Saiyu Bu ⁵ ,
Qi Lu ^{3, 6} ,
Mingpeng Shang ^{1, 2, 3} ,
Kaicheng Jia ³ ,
Xiaohui Qiu ^4,, ,
Qin Xie ^{1, 2, 3,,} ,
Li Lin ^{1, 2, 3, 5,,} ,
Zhongfan Liu ^{1, 2, 3,,}

1.
Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
2.
Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
3.
Beijing Graphene Institute (BGI), Beijing 100095, China
4.
National Center for Nanoscience and Technology, Beijing 100190, China
5.
School of Materials Science and Engineering, Peking University, Beijing 100871, China
6.
College of Science, China University of Petroleum, Beijing 102249, China

Corresponding author: Xiaohui Qiu, xhqiu@nanoctr.cn Qin Xie, xieqin-cnc@pku.edu.cn Li Lin, linli-cnc@pku.edu.cn Zhongfan Liu, zfliu@pku.edu.cn
Received Date: 26 June 2023
Revised Date: 19 July 2023
Accepted Date: 24 July 2023
Available Online: 7 August 2023
Fund Project: the National Natural Science Foundation of China T2188101the National Natural Science Foundation of China 61974139the National Natural Science Foundation of China 51432002the National Natural Science Foundation of China 51520105003the National Natural Science Foundation of China 12232016Beijing Municipal Science & Technology Commission Z181100004818001Beijing Municipal Science & Technology Commission Z191100000819005Beijing Municipal Science & Technology Commission Z191100000819007Beijing Municipal Science & Technology Commission Z201100008720005National Basic Research Program of China 2016YFA0200101National Basic Research Program of China 2016YFA0200103National Basic Research Program of China 2019YFA0708203Beijing National Laboratory for Molecular Sciences BNLMS-CXTD-202001

Graphene offers exceptional properties, such as ultra-high carrier mobility, near-ballistic transport characteristics, and ultra-high-frequency operational response, making it an ideal material for radio-frequency devices and high-speed optical communications. To realize its potential applications, high-quality graphene films must be integrated onto target substrates with reliability, uniformity, and scalability. Despite significant progress in the chemical vapor deposition of high-quality graphene on catalytic metal substrates, the transfer of such films onto application-targeted substrates remains necessary for large-scale technological use, but it faces challenges like contaminations and cracks. Graphene's flexibility and single-atom thickness make it vulnerable to damage and folding during the transfer process due to force disturbances and uneven force distribution. Traditional graphene transfer methods employ organic polymers as a medium and remove them using organic solvents after transferring graphene onto the desired substrates. However, this repetitive process generates organic waste and leaves unavoidable contamination due to the limited solubility of the polymer. Furthermore, selective interlacing of organic solvents during polymer removal can detach graphene from the substrate and cause cracks. In this study, we demonstrate a novel approach to address these issues. Instead of using organic polymers, we directly use the photoresist as the transfer medium to mechanically delaminate graphene from the metal growth substrate onto the targeted substrate. By doing so, we eliminate the need for repeated polymer coating on the graphene surface, enabling successful transfer without crack formation, wrinkles, or unintentional doping. The strong interaction between graphene and the photoresist, coupled with the weakened interaction between graphene and the growth substrate due to oxidation, ensures crack-free delamination. Moreover, the photoresist serves as a patterned mask plate for exposure, etching, and other subsequent device fabrication processes. As a result, the electrical properties of graphene are improved, achieving an average carrier mobility of 6200 cm²·V⁻¹·s⁻¹. This integrated approach not only enhances the device performance of two-dimensional materials but also paves the way for future applications of such materials in electronics and photonics. In conclusion, our method offers a promising solution for the successful transfer and device fabrication of graphene, enhancing its potential in the field of electronics and photonics.
- Graphene transfer,
- Photoresist,
- Transfer medium,
- Carrier mobility
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