Citation: Shuxia Ren, Zheng Yang, Shuailling An, Jie Meng, Xiaomin Liu, Jinjin Zhao. High-Efficiency Photoelectric Regulation of Resistive Switching Memory in Perovskite Quantum Dots[J]. Acta Physico-Chimica Sinica, ;2023, 39(12): 230103. doi: 10.3866/PKU.WHXB202301033 shu

High-Efficiency Photoelectric Regulation of Resistive Switching Memory in Perovskite Quantum Dots

Shuxia Ren ^{1, 2} ,
Zheng Yang ^{1, 2} ,
Shuailling An ^{1, 2} ,
Jie Meng ^{1, 2} ,
Xiaomin Liu ² ,
Jinjin Zhao ^1,,

1.
Hebei Key Laboratory of Inorganic Nano-materials, College of Chemistry and Materials Science, Hebei Normal University, Shijiazhuang 050024, China
2.
School of Materials Science and Engineering, Institute of Materials for Energy Conversion, Shijiazhuang Tiedao University, Shijiazhuang 050043, China

Corresponding author: Jinjin Zhao, jinjinzhao2012@163.com
Received Date: 24 January 2023
Revised Date: 28 February 2023
Accepted Date: 7 March 2023
Available Online: 9 March 2023
Fund Project: the National Natural Science Foundation of China U2130128the National Natural Science Foundation of China 11772207the National Natural Science Foundation of China U21A20430the Natural Science Foundation of Hebei Education Department ZD2020192the Hebei Administration for Market Supervision Science and Technology Project List 2023ZC03the Central Government Guiding Local Science and Technology Development Project 216Z4302Gthe Innovation Capability Improvement Plan Project of Hebei Province 22567604Hthe Basic Research Cooperation Special Foundation of Beijing-Tianjin-Hebei Region H2022205047the Basic Research Cooperation Special Foundation of Beijing-Tianjin-Hebei Region 22JCZXJC00060

Photoelectric resistive switching memory (RRAM) is the most promising competitor in the next generation of non-volatile memory (NVM) owing to its miniaturization, integration, and versatility advantages. A low-temperature spin coating method is deployed to synthesize inorganic CsPbBr₃ quantum dots (QDs) with green fluorescence. Then, flexible photoelectrical dual-controlled Ag/CsPbBr₃ QDs/indium tin oxide (ITO) RRAM devices with high efficiency are prepared, in which the switching behavior is modified by both electric field and light illumination. The as-prepared device demonstrated forming-free bipolar resistive switching behavior in the presence and absence of light. The switching voltages (V_SET) show significant reductions compared to the dark condition, and the hysteresis windows considerably increase under illumination. These indicate a higher ON/OFF ratio and lower energy consumption under illumination than in the dark for the Ag/CsPbBr₃ QDs /ITO device. The ON/OFF ratio of the Ag/CsPbBr₃ QDs /ITO device is about 3.2×10³ under illumination, about 24 times higher than that in the dark state. The V_SET is 2.88 V, approximately 13.3% lower than the dark state. These results are further confirmed by the resistive switching behavior of the 36 memory cells randomly selected in the Ag/CsPbBr₃ QDs /ITO device. Moreover, the devices exhibit good fatigue and retention performance. No noticeable degradation occurre in the high resistance state (HRS) and low resistance state (LRS) even after 500 consecutive cycles. The resistance remain stable for a long retention time exceeding 5000 s. The large ON/OFF ratio, good endurance, and retention properties of the Ag/CsPbBr₃ QDs: GO/ITO device are sufficient for a photoelectric regulation NVM device. Based on the double logarithmic fitting curves during the switching process, it is assumed that the device has the same conduction mechanism under dark and illumination conditions, which is dominated by both ohmic behavior and space charge limited current (SCLC) mechanism in the HRS, and only by the ohmic conduction in the LRS. The primary resistive switching mechanism in the Ag/CsPbBr₃ QDs/ITO devices is enabled by the formation and rupture of the hybrid conductive filament composed of Br^- vacancies and Ag atom owing to both Br^- and Ag⁺ ion migration under an electric field. The main reason for the declining LRS resistance, resulting in the increment of the ON/OFF ratio and V_SET of the above devices, is derived from the increasing photocurrent promoted by the decreasing defect density in CsPbBr₃ QDs films under illumination. High-efficiency photoelectronic regulatory perovskite materials will improve the development of high-density memory RRAM technology.
- Perovskite,
- Photoelectric regulation,
- Resistive switching memory,
- CsPbBr₃,
- Ion migration
1. [1]
  Chang, T.; Chang, K.; Tsai, T.; Chu, T.; Sze, S. Mater Today 2016, 19, 254. doi: 10.1016/j.mattod.2015.11.009 doi: 10.1016/j.mattod.2015.11.009
2. [2]
  Meijer, G. Science 2008, 319, 1625. doi: 10.1126/science.1153909 doi: 10.1126/science.1153909
3. [3]
  Ren, S.; Dong, W.; Tang, H.; Tang, L.; Li, Z.; Sun, Q.; Yang, H.; Yang, Z.; Zhao, J. Appl. Surf. Sci. 2019, 488, 92. doi: 10.1016/j.apsusc.2019.05.129 doi: 10.1016/j.apsusc.2019.05.129
4. [4]
  Ren, S.; Li, Z.; Tang, L.; Su, X.; Zhang, H.; Zhang, G.; Zhang, H.; Cao, G.; Zhao, J. Adv. Electron. Mater. 2020, 6, 2000151. doi: 10.1002/aelm.202000151 doi: 10.1002/aelm.202000151
5. [5]
  Nili, H.; Walia, S.; Balendhran, S.; Strukov, D.; Bhaskaran, M.; Sriram, S. Adv. Funct. Mater. 2014, 24, 6733. doi: 10.1002/adfm.201470279 doi: 10.1002/adfm.201470279
6. [6]
  Li, S.; Zeng, H.; Zhang, S.; Wei, X. Appl. Phys. Lett. 2013, 102, 1636. doi: 10.1063/1.4802209 doi: 10.1063/1.4802209
7. [7]
  Lin, Y.; Xu, H.; Wang, Z.; Cong, T.; Liu, W.; Ma, H.; Liu, Y. Appl. Phys. Lett. 2017, 110, 193503. doi: 10.1063/1.4983382 doi: 10.1063/1.4983382
8. [8]
  Wuttig, M.; Bhaskaran, H.; Taubner, T. Nat. Photon 2017, 11, 465. doi: 10.1038/NPHOTON.2017.126 doi: 10.1038/NPHOTON.2017.126
9. [9]
  He, Z.; Dai, Y.; Li, X.; Guo, D.; Liu, Y.; Huang, X.; Jiang, J.; Wang, S.; Zhu, G.; Zhang, F.; et al. Small 2019, 15, 1804131. doi: 10.1002/smll.201804131 doi: 10.1002/smll.201804131
10. [10]
  Tan, H.; Liu, G.; Zhu, X.; Yang, H.; Chen, B.; Chen, X.; Shang, J.; Lu, W. D.; Wu, Y.; Li, R.-W. Adv. Mater. 2015, 27, 2797. doi: 10.1002/adma.201500039 doi: 10.1002/adma.201500039
11. [11]
  Im, J.; Lee, C.; Lee, J.; Park, S.; Park, N. Nanoscale 2011, 3, 4088. doi: 10.1039/C1NR10867K doi: 10.1039/C1NR10867K
12. [12]
  Abdi-Jalebi, M.; Andaji-Garmaroudi, Z.; Cacovich, S.; Stavrakas, C.; Philippe, B.; Richter, J.; Alsari, M.; Booker, E.; Hutter, E.; Pearson, A.; et al. Nature 2018, 555, 497. doi: 10.1038/nature25989 doi: 10.1038/nature25989
13. [13]
  Choi, J.; Han, J.; Hong, K.; Kim, S.; Jang, H. Adv. Mater. 2018, 30, 1704002. doi: 10.1002/adma.201704002 doi: 10.1002/adma.201704002
14. [14]
  Wehrenfennig, C.; Eperon, G.; Johnston, M.; Snaith, H.; Herz, L. Adv. Mater. 2014, 26, 1584. doi: 10.1002/adma.201305172 doi: 10.1002/adma.201305172
15. [15]
  Dong, Q. F., Y.; Shao, Y.; Mulligan, P.; Qiu, J.; Cao, L.; Huang, J. Science 2015, 347, 967. doi: 10.1126/SCIENCE.AAA5760 doi: 10.1126/SCIENCE.AAA5760
16. [16]
  Zhao, J.; Wang, P.; Wei, L.; Liu, Z.; Fang, X.; Liu, X.; Ren, D.; Mai, Y. Dalton Trans. 2015, 44, 16914. doi: 10.1039/C5DT02388B doi: 10.1039/C5DT02388B
17. [17]
  Zhang, F.; Han, B.; Zeng, H. J. Inorg. Mater. 2022, 2, 117. doi: 10.15541/jim20210441 doi: 10.15541/jim20210441
18. [18]
  Dou, L.; Yang, Y.; You, J.; Hong, Z.; Chang, W.; Li, G.; Yang, Y. Nat. Commun. 2014, 5, 5404. doi: 10.1038/ncomms6404 doi: 10.1038/ncomms6404
19. [19]
  Chen, Y.; Chen, G.; Zhou, Z.; Li, X.; Ma, P.; Li, L.; Yin, W.; Zeng, H.; Zou, G. Adv. Funct. Mater. 2021, 31, 2101966. doi: 10.1002/adfm.202101966 doi: 10.1002/adfm.202101966
20. [20]
  Lin, K.; Xing, J.; Quan, L.; de Arquer, F.; Gong, X.; Lu, J.; Xie, L.; Zhao, W.; Zhang, D.; Yan, C.; et al. Nature 2018, 562, 245. doi: 10.1038/s41586-018-0575-3 doi: 10.1038/s41586-018-0575-3
21. [21]
  Han, B.; Yuan, S.; Cai, B.; Song, J.; Liu, W.; Zhang, F.; Fang, T.; Wei, C.; Zeng, H. Adv. Funct. Mater. 2021, 31, 2011003. doi: 10.1002/adfm.202011003 doi: 10.1002/adfm.202011003
22. [22]
  Chen, J.; Mukherjee, S.; Li, W.; Zeng, H.; Fischer, R. Nat. Rev. Mater. 2022, 7, 677. doi: 10.1038/s41578-022-00476-3 doi: 10.1038/s41578-022-00476-3
23. [23]
  Wei, C.; Su, W.; Li, J.; Xu, B.; Shan, Q.; Wu, Y.; Zhang, F.; Luo, M.; Xiang, H.; Cui, Z.; Zeng, H. Adv. Mater. 2022, 34, 2107798. doi: 10.1002/adma.202107798 doi: 10.1002/adma.202107798
24. [24]
  Zhang, Q.; Tavakoli, M.; Gu, L.; Zhang, D.; Tang, L.; Gao, Y.; Guo, J.; Lin, Y.; Leung, S.; Poddar, S.; et al. Nat. Commun. 2019, 10, 727. doi: 10.1038/s41467-019-08561-y doi: 10.1038/s41467-019-08561-y
25. [25]
  Chin, X.; Cortecchia, D.; Yin, J.; Bruno, A.; Soci, C. Nat. Commun. 2015, 6, 7383. doi: 10.1038/ncomms8383 doi: 10.1038/ncomms8383
26. [26]
  Chen, Q.; Zhang, Y.; Liu, S.; Han, T.; Chen, X.; Xu, Y.; Meng, Z.; Zhang, G.; Zheng, X.; Zhao, J.; et al. Adv. Intell. Syst. 2020, 2, 2000122. doi: 10.1002/aisy.202000122 doi: 10.1002/aisy.202000122
27. [27]
  Yoo, E.; Lyu, M.; Yun, J.; Kang, C.; Choi, Y.; Wang, L. Adv. Mater. 2015, 27, 6170. doi: 10.1002/adma.201502889 doi: 10.1002/adma.201502889
28. [28]
  Choi, J.; Park, S.; Lee, J.; Hong, K.; Kim, D.; Moon, C.; Park, G.; Suh, J.; Hwang, J.; Kim, S.; et al. Adv. Mater. 2016, 28, 6562. doi: 10.1002/adma.201600859 doi: 10.1002/adma.201600859
29. [29]
  Kim, D.; Tak, Y.; Kim, W.; Kim, J.; Kim, J.; Kim, H. Adv. Mater. Interfaces 2017, 4, 1601035. doi: 10.1002/admi.201601035 doi: 10.1002/admi.201601035
30. [30]
  Hwang, B.; Lee, J.-S. Adv. Mater. 2017, 29, 1701048. doi: 10.1002/adma.201701048 doi: 10.1002/adma.201701048
31. [31]
  Zhu, X.; Lee, J.; Lu, W. Adv. Mater. 2017, 29, 1700527. doi: 10.1002/adma.201700527 doi: 10.1002/adma.201700527
32. [32]
  Zhou, F.; Liu, Y.; Shen, X.; Wang, M.; Yuan, F.; Chai, Y. Adv. Funct. Mater. 2018, 28, 1800080. doi: 10.1002/adfm.201800080 doi: 10.1002/adfm.201800080
33. [33]
  Xiao, Z.; Huang, J. Adv. Electron. Mater. 2016, 2, 1600100. doi: 10.1002/aelm.201600100 doi: 10.1002/aelm.201600100
34. [34]
  Chen, S.; Zhang, Y.; Zhao, J.; Mi, Z.; Zhang, J.; Cao, J.; Feng, J.; Zhang, G.; Qi, J.; Li, J.; et al. Sci. Bull 2020, 65, 1643. doi: 10.1016/j.scib.2020.05.020 doi: 10.1016/j.scib.2020.05.020
35. [35]
  Younis, A.; Lin, C.; Guan, X.; Shahrokhi, S.; Huang, C.; Wang, Y.; He, T.; Singh, S.; Hu, L.; Retamal, J.; et al. Adv. Mater. 2021, 33, 2005000. doi: 10.1002/adma.202005000 doi: 10.1002/adma.202005000
36. [36]
  Futscher, M.; Mili, J. Front. Energy Res. 2021, 9, 629074. doi: 10.3389/fenrg.2021.629074 doi: 10.3389/fenrg.2021.629074
37. [37]
  Wang, Y.; Lv, Z.; Liao, Q.; Shan, H.; Chen, J.; Zhou, Y.; Zhou, L.; Chen, X.; Roy, V.; Wang, Z.; et al. Adv. Mater. 2018, 30, 1800327. doi: 10.1002/adma.201800327 doi: 10.1002/adma.201800327
38. [38]
  Yen, M.; Lee, C.; Liu, K.; Peng, Y.; Leng, J.; Chang, T.; Chang, C.; Tamada, K.; Lee, Y. Nat. Commun. 2021, 12, 4460. doi: 10.1038/s41467-021-24762-w doi: 10.1038/s41467-021-24762-w
39. [39]
  Liu, Q.; Yue, W.; Li, Y.; Wang, W.; Xu, L.; Wang, Y.; Gao, S.; Zhang, C.; Kan, H.; Li, C. Adv. Electron. Mater. 2021, 7, 2100366. doi: 10.1002/aelm.202100366 doi: 10.1002/aelm.202100366
40. [40]
  Liu, X.; Ren, S.; Li, Z.; Guo, J.; Yi, S.; Yang, Z.; Hao, W.; Li, R.; Zhao, J. Adv. Funct. Mater. 2022, 32, 2202951. doi: 10.1002/adfm.202202951 doi: 10.1002/adfm.202202951
41. [41]
  Zhang, G.; Xu, Y.; Yang, S.; Ren, S.; Jiao, Y.; Wang, Y.; Ma, X.; Li, H.; Hao, W.; He, C.; Liu, X.; Zhao, J. Nano Energy 2023, 106, 108074. doi: 10.1016/j.nanoen.2022.108074 doi: 10.1016/j.nanoen.2022.108074
42. [42]
  Du, X.; Wu, G.; Cheng, J.; Dang, H.; Ma, K.; Zhang, Y.; Tan, P.; Chen, S. RSC Adv. 2017, 7, 10391. doi: 10.1039/C6RA27665B doi: 10.1039/C6RA27665B
43. [43]
  Zhu, Y.; Cheng, P.; Shi, J.; Wang, H.; Liu, Y.; Xiong, R.; Ma, H.; Ma, H. Adv. Electron. Mater. 2019, 6, 1900754. doi: 10.1002/aelm.201900754 doi: 10.1002/aelm.201900754
44. [44]
  Wang, F.; Yu, M.; Chen, X.; Li, J.; Zhang, Z.; Li, Y.; Zhang, G.; Shi, K.; Shi, L.; Zhang, M.; et al. SmartMat 2022, 4, e1135. doi: 10.1002/smm2.1135 doi: 10.1002/smm2.1135
45. [45]
  Wu, G.; Liang, R.; Ge, M.; Sun, G.; Zhang, Y.; Xing, G. Adv. Mater. 2022, 34, 2105635. doi: 10.1002/adma.202105635 doi: 10.1002/adma.202105635
46. [46]
  Baranowski, M.; Plochocka, P. Adv. Energy Mater. 2020, 1903659. doi: 10.1002/aenm.201903659 doi: 10.1002/aenm.201903659
47. [47]
  Jong, U.; Yu, C.; Ri, G.; McMahon, A.; Harrison, N; Barnes, P.; Walsh, A. J. Mater. Chem. A 2018, 6, 1067. doi: 10.1039/C7TA09112E doi: 10.1039/C7TA09112E
48. [48]
  Cai, H.; Lao, M.; Xu, J.; Chen, Y.; Zhong, C.; Lu, S.; Hao, A.; Chen, R. Ceram. Int. 2019, 45 5724. doi: 10.1016/j.ceramint.2018.12.038 doi: 10.1016/j.ceramint.2018.12.038
49. [49]
  Zhao, X.; Fan, Z.; Xu, H.; Wang, Z.; Xu, J.; Ma, J.; Liu, Y. J. Mater. Chem. C 2018, 6, 7195. doi: 10.1039/C8TC01844H doi: 10.1039/C8TC01844H
50. [50]
  Yoo, E.; Lyu, M.; Yun, J.; Kang, C.; Choi, Y.; Wang, L. J. Mater. Chem. C 2016, 4, 7824. doi: 10.1039/C6TC02503J doi: 10.1039/C6TC02503J
51. [51]
  Huang, Y.; Shen, Z.; Wu, Y.; Wang, X.; Zhang, S.; Shi, X.; Zeng, H. RSC Adv. 2016, 6, 17867. doi: 10.1039/C5RA22728C doi: 10.1039/C5RA22728C
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