Citation: Tan Congwei, Yu Mengshi, Xu Shipu, Wu Jinxiong, Chen Shulin, Zhao Yan, Liu Cong, Zhang Yichi, Tu Teng, Li Tianran, Gao Peng, Peng Hailin. Vapor-Liquid-Solid Growth of Bi₂O₂Se Nanoribbons for High-Performance Transistors[J]. Acta Physico-Chimica Sinica, ;2020, 36(1): 190803. doi: 10.3866/PKU.WHXB201908038 shu

Vapor-Liquid-Solid Growth of Bi₂O₂Se Nanoribbons for High-Performance Transistors

Tan Congwei ^1,2,† ,
Yu Mengshi ^1,† ,
Xu Shipu ¹ ,
Wu Jinxiong ¹ ,
Chen Shulin ³ ,
Zhao Yan ^1,2 ,
Liu Cong ¹ ,
Zhang Yichi ¹ ,
Tu Teng ¹ ,
Li Tianran ¹ ,
Gao Peng ³ ,
Peng Hailin ^1,2,,

1.
Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
2.
Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
3.
Electron Microscopy Laboratory, International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, P. R. China

Corresponding author: Peng Hailin, hlpeng@pku.edu.cn
Received Date: 29 August 2019
Revised Date: 11 October 2019
Accepted Date: 23 October 2019
Available Online: 30 January 2019
Fund Project: The project was supported by the National Natural Science Foundation of China (21733001, 21525310)the National Natural Science Foundation of China 21525310the National Natural Science Foundation of China 21733001

Nanostructured bismuth oxyselenide (Bi₂O₂Se) semiconductor, a two-dimensional (2D) materials with high-mobility, air-stability, and tunable bandgap, has recently emerged as a candidate of channel material for future digital (electronic and optoelectronic) applications. In terms of material morphology, some basic issues will be addressed when a two-dimensional layered crystal is shaped into a one-dimensional (1D) geometry due to size effect; these include the space-confined transport in a plane, which leads to dramatic changes in electronic, optical, and thermal properties. These novel 1D nanostructures with unique properties are an optimal choice for fabricating next-generation integrated circuits and functional devices within the nanometer scale such as gate-all-around field-effect transistors, single-electron transistors, chemical sensors, and THz detectors. As one of the high-mobility 2D semiconductor, 1D high-quality Bi₂O₂Se nanoribbons could be promising for applications in high-performance transistors; however, their synthesis has not been completely developed yet. In our study, we report on the facile growth of Bi₂O₂Se nanoribbons on mica substrates via a bismuth-catalyzed vapor-liquid-solid (VLS) mechanism. The preparation of Bi₂O₂Se nanoribbons is based on a previous work that emphasized on the oxidation of Bi₂Se₃ in a chemical vapor deposition (CVD) system and the use of bismuth (Bi) particles as the precursor of Bi catalysis. The morphology, composition, and structure of the as-grown Bi₂O₂Se nanoribbons were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM), as well as other methods. For a Bi mediated VLS growth process, the growth of Bi₂O₂Se nanoribbons can be self-assembled; further, in this process, as-grown epitaxial Bi₂O₂Se nanoribbons are free-standing with out-of-plane morphology on the mica substrate. Additionally, combining the spherical aberration corrected transmission electron microscope (ACTEM) and selected electron diffraction (SAED) methods, we discovered that the as-synthesized Bi₂O₂Se nanoribbons were single crystalline with high quality. We further investigated the controllable growth for domain size by optimizing the growth temperature of the Bi₂O₂Se nanoribbons. As-synthesized single-crystal Bi₂O₂Se nanoribbons have widths in the range of 100 nm to 20 μm and lengths in the sub-millimeter range. By employing a polymer poly(methyl methacrylate) (PMMA) assisted clean transfer method with the assistance of deionized water, the Bi₂O₂Se nanoribbons can be easily transferred onto a SiO₂/Si substrate. Fabricated into the top-gated field-effect device, the Bi₂O₂Se nanoribbon sample (transferred to the SiO₂/Si substrate) exhibited high electronic performances; these included a high electron mobility of ∼220 cm²∙V⁻¹∙s⁻¹ at room temperature, good switching behavior with on/off ratio of > 10⁶, and high on current density of ∼42 μA∙μm⁻¹ at a channel length of 10 μm. Therefore, Bi₂O₂Se nanoribbons are expected to be a promising materials for building high-performance transistors in the future.
- Bismuth oxyselenide,
- Vapor-liquid-solid growth,
- Nanoribbons,
- CVD,
- High mobility
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Vapor-Liquid-Solid Growth of Bi₂O₂Se Nanoribbons for High-Performance Transistors