Citation: Chen Zhaolong, Gao Peng, Liu Zhongfan. Graphene-Based LED: from Principle to Devices[J]. Acta Physico-Chimica Sinica, ;2020, 36(1): 190700. doi: 10.3866/PKU.WHXB201907004 shu

Graphene-Based LED: from Principle to Devices

Chen Zhaolong ^1,2 ,
Gao Peng ^2,3,, ,
Liu Zhongfan ^1,2,,

1.
Center of NanoChemistry, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
2.
Beijing Graphene Institute (BGI), Beijing 100095, P. R. China
3.
Electron Microscopy Laboratory and International Center for Quantum Materials, Peking University, Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China

Corresponding author: Gao Peng, p-gao@pku.edu.cn Liu Zhongfan, zfliu@pku.edu.cn
Received Date: 1 July 2019
Revised Date: 26 August 2019
Accepted Date: 27 August 2019
Available Online: 3 January 2019
Fund Project: the National Natural Science Foundation of China 51432002the National Key Basic Research Program of China (973) 2016YFA0200103The project was supported by the National Key Basic Research Program of China (973) (2016YFA0200103), the National Natural Science Foundation of China (51432002, 51290272) and the Beijing Municipal Science and Technology Planning Project, China (Z161100002116020)the National Natural Science Foundation of China 51290272the Beijing Municipal Science and Technology Planning Project, China Z161100002116020

Group-Ⅲ nitride (Ⅲ-N) films have numerous applications in LEDs, lasers, and high-power/high-frequency electronic devices because of their direct wide band gap, high breakdown voltage, high saturation velocity of electrons, and high stability. Commercial Ⅲ-N films are usually heteroepitaxially grown on c-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). However, relatively large mismatches occur in the in-plane lattice and thermal expansion between the Ⅲ-N films and sapphire substrates, which lead to high stress and high dislocation density in epilayers that reduce the performance of the LED. Moreover, the poor thermal conductivity of sapphire substrate also hinders many applications. Recently, graphene was used as a buffer layer to overcome the mismatch between Ⅲ-N films and substrates by utilizing van der Waals epitaxy and improving heat dissipation. In this review article, we consider the recent progress in the development of a new type of epitaxial substrate, the so-called "graphene/sapphire substrate" for Ⅲ-N film growth and LED applications. The growth mechanisms are summarized and future prospects are proposed. The article is divided into three parts.1. The synthesis of graphene/sapphire substrate. High-quality monolayer graphene is directly synthesized on sapphire substrates (flat substrate and nanopatterned substrate) by metal-catalyst-free CVD method. The method does not depend on the metal catalyst nor involve a complex and highly technical transfer process, and is compatible with the MOCVD and molecular beam epitaxy process.2. Growth of high-quality Ⅲ-N films on graphene/sapphire substrates. The nucleation of Ⅲ-N on graphene can be tuned by the density of defects in the graphene film. N₂ plasma treatment of the graphene/sapphire substrate can increase the nucleation sites for Ⅲ-N growth by introducing pyrrolic nitrogen doping. Epitaxial lateral overgrowth of the Ⅲ-N is promoted on the graphene/sapphire substrate owing to the relatively lower diffusion barrier of atoms on graphene. Consequently, the biaxial stress in group-Ⅲ nitride is significantly decreased while the dislocation density is reduced even without a low-temperature buffer layer. Moreover, vertically-oriented graphene nanowalls can effectively improve the heat dissipation in AlN films.3. High-performance LEDs on graphene/sapphire substrate. High-quality Ⅲ-N films obtained on graphene/sapphire substrates enable LED fabrication. The as-fabricated LEDs on graphene/sapphire substrate deliver much higher light output power compared with that on bare sapphire substrate. The as-fabricated LEDs have low turn-on voltage, high output power, and good reliability. Graphene can also be utilized as transfer medium or transparent conductive electrode to boost LED performance.
- Graphene,
- Chemical vapor deposition,
- Sapphire,
- Group-Ⅲ nitride films,
- LED,
- Van der Waals epitaxy
1. [1]
  Pimputkar, S.; Speck, J. S.; DenBaars, S. P.; Nakamura, S. Nat. Photonics 2009, 3, 179. doi: 10.1038/nphoton.2009.32 doi: 10.1038/nphoton.2009.32
2. [2]
  Schubert, E. F.; Kim, J. K. Science 2005, 308, 1274. doi: 10.1126/science.1108712 doi: 10.1126/science.1108712
3. [3]
  Ponce, F. A.; Bour, D. P. Nature 1997, 386, 351. doi: 10.1038/386351a0 doi: 10.1038/386351a0
4. [4]
  Kobayashi, Y.; Kumakura, K.; Akasaka, T.; Makimoto, T. Nature 2012, 484, 223. doi: 10.1038/nature10970 doi: 10.1038/nature10970
5. [5]
  Choi, J. H.; Zoulkarneev, A.; Il Kim, S.; Baik, C. W.; Yang, M. H.; Park, S. S.; Suh, H.; Kim, U. J.; Bin Son, H.; Lee, J. S.; et al. Nat. Photonics 2011, 5, 763. doi: 10.1038/nphoton.2011.253 doi: 10.1038/nphoton.2011.253
6. [6]
  Li, G.; Wang, W.; Yang, W.; Lin, Y.; Wang, H.; Lin, Z.; Zhou, S. Rep. Prog. Phys. 2016, 79, 056501. doi: 10.1088/0034-4885/79/5/056501 doi: 10.1088/0034-4885/79/5/056501
7. [7]
  Nakamura, S.; Krames, M. R. Proc. IEEE 2013, 101, 2211. doi: 10.1109/jproc.2013.2274929 doi: 10.1109/jproc.2013.2274929
8. [8]
  Sheu, J. K.; Chang, S. J.; Kuo, C. H.; Su, Y. K.; Wu, L. W.; Lin, Y. C.; Lai, W. C.; Tsai, J. M.; Chi, G. C.; Wu, R. K. IEEE Photonics Technol. Lett. 2003, 15, 18. doi: 10.1109/lpt.2002.805852 doi: 10.1109/lpt.2002.805852
9. [9]
  Fernandez-Garrido, S.; Ramsteiner, M.; Gao, G.; Galves, L. A.; Sharma, B.; Corfdir, P.; Calabrese, G.; Schiaber, Z. D. S.; Pfueller, C.; Trampert, A.; et al. Nano Lett. 2017, 17, 5213. doi: 10.1021/acs.nanolett.7b01196 doi: 10.1021/acs.nanolett.7b01196
10. [10]
  Kim, Y.; Cruz, S. S.; Lee, K.; Alawode, B. O.; Choi, C.; Song, Y.; Johnson, J. M.; Heidelberger, C.; Kong, W.; Choi, S.; et al. Nature 2017, 544, 340. doi: 10.1038/nature22053 doi: 10.1038/nature22053
11. [11]
  Choi, J. H.; Zoulkarneev, A.; Kim, S. I.; Baik, C. W.; Yang, M. H.; Park, S. S.; Suh, H.; Kim, U. J.; Bin Son, H.; Lee, J. S.; et al. Nat. Photonics 2011, 5, 763. doi: 10.1038/nphoton.2011.253 doi: 10.1038/nphoton.2011.253
12. [12]
  Meyaard, D. S.; Cho, J.; Schubert, E. F.; Han, S. H.; Kim, M. H.; Sone, C. Appl. Phys. Lett. 2013, 103, 121103. doi: 10.1063/1.4821538 doi: 10.1063/1.4821538
13. [13]
  Yung, K. C.; Liem, H.; Choy, H. S.; Lun, W. K. J. Appl. Phys. 2011, 109, 094509. doi: 10.1063/1.3580264 doi: 10.1063/1.3580264
14. [14]
  Chung, K.; Lee, C. H.; Yi, G. C. Science 2010, 330, 655. doi: 10.1126/science.1195403 doi: 10.1126/science.1195403
15. [15]
  Wong, W. S.; Sands, T.; Cheung, N. W. Appl. Phys. Lett. 1998, 72, 599. doi: 10.1063/1.120816 doi: 10.1063/1.120816
16. [16]
  Geim, A. K.; Novoselov, K. S. Nat. Mater. 2007, 6, 183. doi: 10.1038/nmat1849 doi: 10.1038/nmat1849
17. [17]
  Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Science 2004, 306, 666. doi: 10.1126/science.1102896 doi: 10.1126/science.1102896
18. [18]
  Chen, J. H.; Jang, C.; Xiao, S.; Ishigami, M.; Fuhrer, M. S. Nat. Nanotechnol. 2008, 3, 206. doi: 10.1038/nnano.2008.58 doi: 10.1038/nnano.2008.58
19. [19]
  Seol, J. H.; Jo, I.; Moore, A. L.; Lindsay, L.; Aitken, Z. H.; Pettes, M. T.; Li, X.; Yao, Z.; Huang, R.; Broido, D.; et al. Science 2010, 328, 213. doi: 10.1126/science.1184014 doi: 10.1126/science.1184014
20. [20]
  Lee, C.; Wei, X.; Kysar, J. W.; Hone, J. Science 2008, 321, 385. doi: 10.1126/science.1157996 doi: 10.1126/science.1157996
21. [21]
  Nair, R. R.; Blake, P.; Grigorenko, A. N.; Novoselov, K. S.; Booth, T. J.; Stauber, T.; Peres, N. M. R.; Geim, A. K. Science 2008, 320, 1308. doi: 10.1126/science.1156965 doi: 10.1126/science.1156965
22. [22]
  Meric, I.; Han, M. Y.; Young, A. F.; Ozyilmaz, B.; Kim, P.; Shepard, K. L. Nat. Nanotechnol. 2008, 3, 654. doi: 10.1038/nnano.2008.268 doi: 10.1038/nnano.2008.268
23. [23]
  Raccichini, R.; Varzi, A.; Passerini, S.; Scrosati, B. Nat. Mater. 2015, 14, 271. doi: 10.1038/nmat4170 doi: 10.1038/nmat4170
24. [24]
  Liu, Z. F. Acta Phys. -Chim. Sin. 2017, 33, 853. doi: 10.3866/PKU.WHXB201703171
25. [25]
  Liu, S. W.; Wang, H. P.; Xu, Q.; Ma, T. B.; Yu, G.; Zhang, C.; Geng, D.; Yu, Z.; Zhang, S.; Wang, W.; et al. Nat. Commun. 2017, 8, 839. doi: 10.1038/ncomms14029 doi: 10.1038/ncomms14029
26. [26]
  Xia, F.; Mueller, T.; Lin, Y. M.; Valdes-Garcia, A.; Avouris, P. Nat. Nanotechnol. 2009, 4, 839. doi: 10.1038/nnano.2009.292 doi: 10.1038/nnano.2009.292
27. [27]
  Nayak, T. R.; Andersen, H.; Makam, V. S.; Khaw, C.; Bae, S.; Xu, X.; Ee, P. L. R.; Ahn, J. H.; Hong, B. H.; Pastorin, G.; et al. ACS Nano 2011, 5, 4670. doi: 10.1021/nn200500h doi: 10.1021/nn200500h
28. [28]
  Kong, W.; Li, H.; Qiao, K.; Kim, Y.; Lee, K.; Nie, Y.; Lee, D.; Osadchy, T.; Molnar, R. J.; Gaskill, D. K.; et al. Nat. Mater. 2018, 17, 999. doi: 10.1038/s41563-018-0176-4 doi: 10.1038/s41563-018-0176-4
29. [29]
  Tan, X.; Yang, S.; Li, H. Acta Chim. Sin. 2017, 75, 271. doi: 10.6023/a16100552
30. [30]
  Kim, J.; Bayram, C.; Park, H.; Cheng, C. W.; Dimitrakopoulos, C.; Ott, J. A.; Reuter, K. B.; Bedell, S. W.; Sadana, D. K. Nat. Commun. 2014, 5. doi: 10.1038/ncomms5836 doi: 10.1038/ncomms5836
31. [31]
  Nam, H.; Tran Viet, C.; Han, M.; Ryu, B. D.; Chandramohan, S.; Park, J. B.; Kang, J. H.; Park, Y. J.; Ko, K. B.; Kim, H. Y.; et al. Nat. Commun. 2013, 4. doi: 10.1038/ncomms2448 doi: 10.1038/ncomms2448
32. [32]
  Gupta, P.; Rahman, A. A.; Hatui, N.; Gokhale, M. R.; Deshmukh, M. M.; Bhattacharya, A. J. Cryst. Growth 2013, 372, 105. doi: 10.1016/j.jcrysgro.2013.03.020 doi: 10.1016/j.jcrysgro.2013.03.020
33. [33]
  Mohseni, P. K.; Behnam, A.; Wood, J. D.; Zhao, X.; Yu, K. J.; Wang, N. C.; Rockett, A.; Rogers, J. A.; Lyding, J. W.; Pop, E.; et al. Adv. Mater. 2014, 26, 3755. doi: 10.1002/adma.201305909 doi: 10.1002/adma.201305909
34. [34]
  Chen, Z.; Liu, Z.; Wei, T.; Yang, S.; Dou, Z.; Wang, Y.; Ci, H.; Chang, H.; Qi, Y.; Yan, J.; et al. Adv. Mater. 2019, 31, 1807345. doi: 10.1002/adma.201807345 doi: 10.1002/adma.201807345
35. [35]
  Chang, H.; Chen, Z.; Li, W.; Yan, J.; Hou, R.; Yang, S.; Liu, Z.; Yuan, G.; Wang, J.; Li, J.; et al. Appl. Phys. Lett. 2019, 114, 091107. doi: 10.1063/1.5081112 doi: 10.1063/1.5081112
36. [36]
  Zhang, L.; Li, X.; Shao, Y.; Yu, J.; Wu, Y.; Hao, X.; Yin, Z.; Dai, Y.; Tian, Y.; Huo, Q.; et al. ACS Appl. Mater. Interfaces 2015, 7, 4504. doi: 10.1021/am5087775 doi: 10.1021/am5087775
37. [37]
  Yoo, H.; Chung, K.; Choi, Y. S.; Kang, C. S.; Oh, K. H.; Kim, M.; Yi, G. C. Adv. Mater. 2012, 24, 515. doi: 10.1002/adma.201103829 doi: 10.1002/adma.201103829
38. [38]
  Li, Y.; Zhao, Y.; Wei, T.; Liu, Z.; Duan, R.; Wang, Y.; Zhang, X.; Wu, Q.; Yan, J.; Yi, X.; et al. Jpn. J. Appl. Phys. 2017, 56. doi: 10.7567/jjap.56.085506 doi: 10.7567/jjap.56.085506
39. [39]
  Yoo, H.; Chung, K.; Park, S. I.; Kim, M.; Yi, G. C. Appl. Phys. Lett. 2013, 102, 051908. doi: 10.1063/1.4790385 doi: 10.1063/1.4790385
40. [40]
  Paton, K. R.; Varrla, E.; Backes, C.; Smith, R. J.; Khan, U.; O'Neill, A.; Boland, C.; Lotya, M.; Istrate, O. M.; King, P.; et al. Nat. Mater. 2014, 13, 624. doi: 10.1038/nmat3944 doi: 10.1038/nmat3944
41. [41]
  Chen, X. D.; Liu, Z. B.; Zheng, C. Y.; Xing, F.; Yan, X. Q.; Chen, Y.; Tian, J. G. Carbon 2013, 56, 271. doi: 10.1016/j.carbon.2013.01.011 doi: 10.1016/j.carbon.2013.01.011
42. [42]
  Liang, X.; Sperling, B. A.; Calizo, I.; Cheng, G.; Hacker, C. A.; Zhang, Q.; Obeng, Y.; Yan, K.; Peng, H.; Li, Q.; et al. ACS Nano 2011, 5, 9144. doi: 10.1021/nn203377t doi: 10.1021/nn203377t
43. [43]
  Lin, Y. C.; Jin, C.; Lee, J. C.; Jen, S. F.; Suenaga, K.; Chiu, P. W. ACS Nano 2011, 5, 2362. doi: 10.1021/nn200105j doi: 10.1021/nn200105j
44. [44]
  Chen, Z.; Zhang, X.; Dou, Z.; Wei, T.; Liu, Z.; Qi, Y.; Ci, H.; Wang, Y.; Li, Y.; Chang, H.; et al. Adv. Mater. 2018, 30, 1801608. doi: 10.1002/adma.201801608 doi: 10.1002/adma.201801608
45. [45]
  Qi, Y.; Wang, Y.; Pang, Z.; Dou, Z.; Wei, T.; Gao, P.; Zhang, S.; Xu, X.; Chang, Z.; Deng, B.; et al. J. Am. Chem. Soc. 2018, 140, 11935. doi: 10.1021/jacs.8b03871 doi: 10.1021/jacs.8b03871
46. [46]
  Ci, H.; Chang, H.; Wang, R.; Wei, T.; Wang, Y.; Chen, Z.; Sun, Y.; Dou, Z.; Liu, Z..; Li, J.; et al. Adv. Mater. 2019, 31, 1901624. doi: 10.1002/adma.201901624 doi: 10.1002/adma.201901624
47. [47]
  Chen, Z.; Qi, Y.; Chen, X.; Zhang, Y.; Liu, Z. Adv. Mater. 2019, 31, 1803639. doi: 10.1002/adma.201803639 doi: 10.1002/adma.201803639
48. [48]
  Sun, J.; Chen, Y.; Priydarshi, M. K.; Chen, Z.; Bachmatiuk, A.; Zou, Z.; Chen, Z.; Song, X.; Gao, Y.; Ruemmeli, M. H.; et al. Nano Lett. 2015, 15, 5846. doi: 10.1021/acs.nanolett.5b01936 doi: 10.1021/acs.nanolett.5b01936
49. [49]
  Kohler, C.; Hajnal, Z.; Deak, P.; Frauenheim, T.; Suhai, S. Phys. Rev. B 2001, 64, 085333. doi: 10.1103/PhysRevB.64.085333 doi: 10.1103/PhysRevB.64.085333
50. [50]
  Fanton, M. A.; Robinson, J. A.; Puls, C.; Liu, Y.; Hollander, M. J.; Weiland, B. E.; LaBella, M.; Trumbull, K.; Kasarda, R.; Howsare, C.; et al. ACS Nano 2011, 5, 8062. doi: 10.1021/nn202643t doi: 10.1021/nn202643t
51. [51]
  Hwang, J.; Kim, M.; Campbell, D.; Alsalman, H. A.; Kwak, J. Y.; Shivaraman, S.; Woll, A. R.; Singh, A. K.; Hennig, R. G.; Gorantla, S.; et al. ACS Nano 2013, 7, 385. doi: 10.1021/nn305486x doi: 10.1021/nn305486x
52. [52]
  Alaskar, Y.; Arafin, S.; Wickramaratne, D.; Zurbuchen, M. A.; He, L.; McKay, J.; Lin, Q.; Goorsky, M. S.; Lake, R. K.; Wang, K. L. Adv. Funct. Mater. 2014, 24, 6629. doi: 10.1002/adfm.201400960 doi: 10.1002/adfm.201400960
53. [53]
  Sun, M.; Tang, W.; Ren, Q.; Wang, S.; JinYu; Du, Y.; Zhang, Y. Appl. Surf. Sci. 2015, 356, 668. doi: 10.1016/j.apsusc.2015.08.102 doi: 10.1016/j.apsusc.2015.08.102
54. [54]
  Al Balushi, Z. Y.; Miyagi, T.; Lin, Y. C.; Wang, K.; Calderin, L.; Bhimanapati, G.; Redwing, J. M.; Robinson, J. A. Surf. Sci. 2015, 634, 81. doi: 10.1016/j.susc.2014.11.020 doi: 10.1016/j.susc.2014.11.020
55. [55]
  Nam, H.; Tran Viet, C.; Han, M.; Ryu, B. D.; Chandramohan, S.; Park, J. B.; Kang, J. H.; Park, Y. J.; Ko, K. B.; Kim, H. Y.; et al. Nat. Commun. 2013, 4, 1452. doi: 10.1038/ncomms2448 doi: 10.1038/ncomms2448
56. [56]
  Moon, J.; An, J.; Sim, U.; Cho, S. P.; Kang, J. H.; Chung, C.; Seo, J. H.; Lee, J.; Nam, K. T.; Hong, B. H. Adv. Mater. 2014, 26, 3501. doi: 10.1002/adma.201306287 doi: 10.1002/adma.201306287
57. [57]
  Shao, Y.; Zhang, S.; Engelhard, M. H.; Li, G.; Shao, G.; Wang, Y.; Liu, J.; Aksay, I. A.; Lin, Y. J. Mater. Chem. 2010, 20, 7491. doi: 10.1039/c0jm00782j doi: 10.1039/c0jm00782j
58. [58]
  Jafri, R. I.; Rajalakshmi, N.; Ramaprabhu, S. J. Mater. Chem. 2010, 20, 7114. doi: 10.1039/c0jm00467g doi: 10.1039/c0jm00467g
59. [59]
  Cancado, L. G.; Jorio, A.; Martins Ferreira, E. H.; Stavale, F.; Achete, C. A.; Capaz, R. B.; Moutinho, M. V. O.; Lombardo, A.; Kulmala, T. S.; Ferrari, A. C. Nano Lett. 2011, 11, 3190. doi: 10.1021/nl201432g doi: 10.1021/nl201432g
60. [60]
  Trodahl, H. J.; Martin, F.; Muralt, P.; Setter, N. Appl. Phys. Lett. 2006, 89, 061905. doi: 10.1063/1.2335582 doi: 10.1063/1.2335582
61. [61]
  Prokofyeva, T.; Seon, M.; Vanbuskirk, J.; Holtz, M.; Nikishin, S. A.; Faleev, N. N.; Temkin, H.; Zollner, S. Phys. Rev. B 2001, 63, 125313. doi: 10.1103/PhysRevB.63.125313 doi: 10.1103/PhysRevB.63.125313
62. [62]
  Sarua, A.; Kuball, M.; Van Nostrand, J. E. Appl. Phys. Lett. 2002, 81, 1426. doi: 10.1063/1.1501762 doi: 10.1063/1.1501762
63. [63]
  Srikant, V.; Speck, J. S.; Clarke, D. R. J. Appl. Phys. 1997, 82, 4286. doi: 10.1063/1.366235 doi: 10.1063/1.366235
64. [64]
  Wu, Y.; Hanlon, A.; Kaeding, J. F.; Sharma, R.; Fini, P. T.; Nakamura, S.; Speck, J. S. Appl. Phys. Lett. 2004, 84, 912. doi: 10.1063/1.1646222 doi: 10.1063/1.1646222
65. [65]
  Ra, Y. H.; Navamathavan, R.; Park, J. H.; Lee, C. R. ACS Appl. Mater. Interfaces 2013, 5, 2111. doi: 10.1021/am303056v doi: 10.1021/am303056v
66. [66]
  Goldberger, J.; He, R. R.; Zhang, Y. F.; Lee, S. W.; Yan, H. Q.; Choi, H. J.; Yang, P. D. Nature 2003, 422, 599. doi: 10.1038/nature01551 doi: 10.1038/nature01551
67. [67]
  Yasan, A.; McClintock, R.; Mayes, K.; Shiell, D.; Gautero, L.; Darvish, S. R.; Kung, P.; Razeghi, M. Appl. Phys. Lett. 2003, 83, 4701. doi: 10.1063/1.1633019 doi: 10.1063/1.1633019
68. [68]
  Yasan, A.; McClintock, R.; Mayes, K.; Darvish, S. R.; Kung, P.; Razeghi, M. Appl. Phys. Lett. 2002, 81, 801. doi: 10.1063/1.1497709 doi: 10.1063/1.1497709
69. [69]
  Hoiaas, I. M.; Liudi Mulyo, A.; Vullum, P. E.; Kim, D. C.; Ahtapodov, L.; Fimland, B. O.; Kishino, K.; Weman, H. Nano Lett. 2019, 19, 1649. doi: 10.1021/acs.nanolett.8b04607 doi: 10.1021/acs.nanolett.8b04607
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  Zhihuan XU , Qing KANG , Yuzhen LONG , Qian YUAN , Cidong LIU , Xin LI , Genghuai TANG , Yuqing LIAO . Effect of graphene oxide concentration on the electrochemical properties of reduced graphene oxide/ZnS. Chinese Journal of Inorganic Chemistry, 2024, 40(7): 1329-1336. doi: 10.11862/CJIC.20230447
2. [2]
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沈阳化工大学材料科学与工程学院沈阳 110142