Citation: LIU Xinke, WANG Jiale, XU Chuyu, LUO Jiangliu, LIANG Disi, CEN Yunuo, L Youming, LI Zhiwen. Temperature-Dependent Phonon Shifts in Mono-layer, Few-layer, and Bulk WS₂ Films[J]. Acta Physico-Chimica Sinica, ;2019, 35(10): 1134-1141. doi: 10.3866/PKU.WHXB201809013 shu

Temperature-Dependent Phonon Shifts in Mono-layer, Few-layer, and Bulk WS₂ Films

College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, Shenzhen 518060, Guangdong Province, P. R. China

Corresponding author: LI Zhiwen, lizhiwen2017@email.szu.edu.cn
Received Date: 10 September 2018
Revised Date: 12 October 2018
Accepted Date: 11 November 2018
Available Online: 5 October 2018
Fund Project: Natural Science Foundation of SZU, China 000062Natural Science Foundation of Guangdong Province, China 2016 A030313060The project was supported by the National Key Research and Development Plan (2017YFB0403000), the National Natural Science Foundation of China (61504083), the Public Welfare Capacity Building in Guangdong Province, China (2015A010103016), the Science and Technology Foundation of Shenzhen, China (JCYJ20160226192033020), the Natural Science Foundation of Guangdong Province, China (2016A030313060), the PhD Start-up Fund of Natural Science Foundation of Guangdong Province, China (2017A030310424), the Natural Science Foundation of SZU, China (000062), and the National Taipei University of Technology-Shenzhen University Joint Research Program, China (2018001)Public Welfare Capacity Building in Guangdong Province, China 2015A010103016National Taipei University of Technology-Shenzhen University Joint Research Program, China 2018001PhD Start-up Fund of Natural Science Foundation of Guangdong Province, China 2017A030310424Science and Technology Foundation of Shenzhen, China JCYJ20160226192033020National Natural Science Foundation of China 61504083The project was supported by the National Key Research and Development Plan 2017YFB0403000

Two-dimensional transition metal disulfides (TMDs) have recently attracted significant research attention due to their rich physical and chemical properties. Graphene has also been studied intensively due to its high electron mobility of ~200000 cm²·V⁻¹·s⁻¹. Since there is no band gap, it is difficult for a graphene-based device to achieve high current on/off ratio. For TMDs, such as MoS₂, MoSe₂, WSe₂, and WS₂, the band gaps of these materials can be adjusted according to the number of layers. Since TMD has the advantage of suppressing source-drain tunneling current in an ultra-short transistor and offering superior immunity to short-channel effects, it is also attractive for use as a channel material in Si complementary metal oxide semiconductor (CMOS) devices larger than 22 nm. Among them, MoS₂ in single-layer and multi-layer films have been intensively researched for many years. MoS₂-based field effect transistors (FETs) with excellent electrical properties have been reported. WS₂ has lower in-plane electronic mass than MoS₂, MoSe₂, and MoTe₂, and therefore has potential for higher carrier mobility or higher output current for WS₂-based FETs. Experimental research on WS₂ is limited compared to MoS₂, and more work is needed to further exploit the full potential of WS₂-based FETs. Therefore, the electron-phonon interaction and vibration properties of WS₂ used in nano-electronic applications and FETs must be investigated. To this end, mono-layer (1L), few-layer (FL), and bulk WS₂ films were prepared using mechanical exfoliation from a WS₂ crystal. 3M scotch-tape was used for transferring the WS₂ films. Detailed temperature-dependent Raman study on 1L, FL, and bulk WS₂ films has been conducted using a 514-nm excitation laser. Raman spectroscopy, as an effective and non-destructive approach for phonon vibration study, has been used to evaluate TMDs. The Raman spectra reveal much useful information on the test sample in terms of peak position and spectral shape change. With the film thickness increasing to bulk, the A_1g(Γ) and E_2g¹(Γ) modes show blue-shift and red-shift, respectively, with respect to 1L WS₂. Moreover, when the dominant Raman vibration modes swaps between E_2g¹(Γ) and A_1g(Γ), the "cross-over" temperature was identified for 1L, FL, and bulk WS₂ films. WS₂ shows smaller frequency change Δ between the E_2g¹(Γ) and A_1g(Γ) modes than MoS₂, with varying film thickness. The temperature coefficient of the Raman peak position was one magnitude lower for WS₂ than MoS₂, implying that WS₂ has better thermal stability than MoS₂. The results of this systematic study provide a physical guidance for WS₂-based device design.
- WS₂,
- Film thickness,
- Raman,
- Photoluminescence,
- Vibration mode
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Temperature-Dependent Phonon Shifts in Mono-layer, Few-layer, and Bulk WS2 Films

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Temperature-Dependent Phonon Shifts in Mono-layer, Few-layer, and Bulk WS₂ Films