Citation: ZHANG Hao, LI Xin-Gang, CAI Jin-Meng, WANG Ya-Ting, WU Mo-Qing, DING Tong, MENG Ming, TIAN Ye. 氢氟酸加入量对钛基半导体结构演变及光催化性能的影响[J]. Acta Physico-Chimica Sinica, ;2017, 33(10): 2072-2081. doi: 10.3866/PKU.WHXB201705127
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以钛酸丁酯为钛源,氢氟酸为氟源,采用溶剂热法制备了一系列钛基半导体纳米晶,考察了氢氟酸加入量对纳米晶结构演变的影响,并通过光催化产氢、光降解罗丹明B及瞬态光电流响应测试了所得纳米晶的光催化性能。当不加氢氟酸时,所得纳米晶为TiO2纳米颗粒,主要暴露{101}面。加入少量氢氟酸时,所得纳米晶为主要暴露{001}面的TiO2纳米片,这是由于氟离子吸附于纳米晶表面,降低{001}面表面能所致。由于{001}面与{101}面间的晶面异质结促进了载流子分离,该样品表现出了最高的光催化性能。继续增加氢氟酸加入量,氟离子开始进入晶格构成新晶相,所得纳米晶的表面与体相均形成TiO2与TiOF2混合相,形貌呈现片层堆叠结构,光催化性能下降。当进一步增加氢氟酸加入量后,氟离子全部进入晶格形成大颗粒(NH4)0.3TiO1.1F2.1。因其具有不适宜光催化反应的能带结构,该物质表现出了较差的光催化活性,但其可作为制备氮、氟掺杂钛基半导体材料的前驱体使用。
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