Citation: LÜ Qian-Rui, LI Jing, LIAN Zhi-Peng, ZHAO Hao-Yan, DONG Gui-Fang, LI Qiang, WANG Li-Duo, YAN Qing-Feng. CH₃NH₃PbI₃ Single Crystal-Based Ambipolar Field-Effect Transistor with Ta₂O₅ as the Top Gate Dielectric[J]. Acta Physico-Chimica Sinica, ;2017, 33(1): 249-254. doi: 10.3866/PKU.WHXB201610142 shu

CH₃NH₃PbI₃ Single Crystal-Based Ambipolar Field-Effect Transistor with Ta₂O₅ as the Top Gate Dielectric

Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China

Received Date: 22 August 2016
Revised Date: 14 October 2016

Fund Project: The project was supported by the National Natural Science Foundation of China (51173097, 91333109), National Key Basic Research Program of China (2013CB632900), Tsinghua University Initiative Scientific Research Program, China (20131089202, 20161080165), and Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics, China (KF201516).

Organic-inorganic hybrid perovskite methylammonium lead iodide (CH₃NH₃PbI₃) generally tends to show n-type semiconductor properties. In this work, a field-effect transistor (FET) device based on a CH₃NH₃PbI₃ single crystal with tantalum pentoxide (Ta₂O₅) as the top gate dielectric was fabricated. The p-type field-effect transport properties of the device were observed in the dark. The hole mobility of the device extracted from transfer characteristics in the dark was 8.7×10^-5 cm²·V^-1·s^-1, which is one order of magnitude higher than that of polycrystalline FETs with SiO₂ as the bottom gate dielectric. In addition, the effect of light illumination on the CH₃NH₃PbI₃ single-crystal FET was studied. Light illumination strongly influenced the field effect of the device because of the intense photoelectric response of the CH₃NH₃PbI₃ single crystal. Different from a CH₃NH₃PbI₃ polycrystalline FET with a bottom gate dielectric, even with the top gate dielectric shielding, light illumination of 5.00 mW·cm^-2 caused the hole current to increase by one order of magnitude compared with that in the dark (V_GS (gate-source voltage)=V_DS (drain-source voltage)=20 V) and the photoresponsivity reached 2.5 A·W^-1. The introduction of Ta₂O₅ as the top gate dielectric selectively enhanced hole transport in the single-crystal FET, indicating that in the absence of external factors, by appropriate device design, CH₃NH₃PbI₃ also has potential for use in ambipolar transistors.
- Perovskite,
- Tantalum pentoxide,
- Field-effect,
- Mobility,
- Light illumination
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CH₃NH₃PbI₃ Single Crystal-Based Ambipolar Field-Effect Transistor with Ta₂O₅ as the Top Gate Dielectric