Citation: ZHOU Li, LIU Huan-Huan, YANG Yu-Lin, QIANG Liang-Sheng. Preparation and Performance of a SILAR TiO2/CdS/Co-Pi Water Oxidation Photoanode[J]. Acta Physico-Chimica Sinica, ;2016, 32(11): 2731-2736. doi: 10.3866/PKU.WHXB201608232
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Asemiconductor heterostructure of TiO2/CdS/cobalt phosphate water oxidation catalyst (Co-Pi WOC) photoanode was fabricated by the successive ionic layer adsorption and reaction (SILAR) procedure and photoassisted electro-deposition. The structure, morphologys and magnetic properties of the resultant particles were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS). CdS and Co-Pi quantum dots loaded on to the TiO2 nanofilm. The TiO2/CdS/Co-Pi photoanode had an initial photocurrent of 1.3 mA·cm-2 and a stable level of 0.5 mA·cm-2. A relatively stable level was maintained under visible light irradiation in neutral solution, especially at the low bias voltage of 0 V (vs Ag/AgCl). In this system, CdS quantum dots serve as the light absorber and generate electron holes; the Co-Pi WOC acts as a hole transfer layer that can transfer the hole for water oxidation; and the TiO2 is the electron conductor for efficient charge transfer to the cathode to actualize proton reduction.
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