Citation: XING Lei, JIAO Li-Ying. Recent Advances in the Chemical Doping of Two-Dimensional Molybdenum Disulfide[J]. Acta Physico-Chimica Sinica, ;2016, 32(9): 2133-2145. doi: 10.3866/PKU.WHXB201606162 shu

Recent Advances in the Chemical Doping of Two-Dimensional Molybdenum Disulfide

XING Lei ^1,2, ,
JIAO Li-Ying ²

1.
College of Chemical Engineering, Beijing University of Chemical Technology, Beijing 100029, P. R. China;
2.
Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China

Received Date: 28 March 2016
Revised Date: 14 June 2016

Semiconducting, two-dimensional (2D) transition metal dichalcogenides (TMDCs) such as molybdenum disulfide (MoS₂) have attracted significant attention because of their unique properties and promising applications in electronic and optoelectronic devices. However, the controllable tuning of the properties of 2D MoS₂ remains a key challenge with regard to its practical application. Among various approaches to addressing this issue, chemical doping is one of the most efficient. This review focuses on three major doping strategies, which are surface charge transfer, in-plane substitution and interlayer intercalation. We discuss the principles, latest progress and limitations of these doping approaches. Finally, we summarize the current challenges and opportunities associated with the chemical doping of 2D MoS₂.
- Two-dimensional molybdenum disulfide,
- Chemical doping,
- Surface adsorption,
- In-plane substitution,
- Intercalation
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