Citation: XIA Ji-Ye, DONG Guo-Dong, TIAN Bo-Yuan, YAN Qiu-Ping, HAN Jie, QIU Song, LI Qing-Wen, LIANG Xue-Lei, PENG Lian-Mao. Contact Resistance Effects in Carbon Nanotube Thin Film Transistors[J]. Acta Physico-Chimica Sinica, ;2016, 32(4): 1029-1035. doi: 10.3866/PKU.WHXB201601292 shu

Contact Resistance Effects in Carbon Nanotube Thin Film Transistors

1.
1. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P. R. China;
2.
2. Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu Province, P. R. China

Corresponding author: LIANG Xue-Lei,
Received Date: 11 December 2015
Available Online: 29 January 2016
Fund Project: 国家自然科学基金(61321001) (61321001) 北京市科学技术委员会(Z141100003814006) (Z141100003814006) 教育部(113003A)资助项目 (113003A)

The contact resistance effect in the network type carbon nanotube thin film transistors (CNT-TFTs) is studied by using different contact metals. It is shown that palladium (Pd) can form an ohmic type contact with the carbon nanotube thin film, and gold (Au) forms an almost ohmic contact. On-state current and carrier mobility in the devices of these two contacts are high. In contrast, both titanium (Ti) and aluminum (Al) form Schottkytype contacts with the carbon nanotube thin film. The barrier height and the contact resistance of the Al contact are higher than those of the Ti contact. Therefore, the on-state current and carrier mobility are relatively low in the corresponding devices of these two types of contacts. These results indicate that the performance of CNTTFTs can be tuned by the contact metal, which is important for the commercialization of CNT-TFTs.
- Carbon nanotube,
- Thin film transistor,
- Contact resistance,
- Ohmic contact,
- Schottky barrier
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