Citation: LÜ Jing-Mei, CHENG Xuan. Electrochemical Behavior of Porous and Flat Silicon Electrode Interfaces[J]. Acta Physico-Chimica Sinica, ;2016, 32(3): 711-716. doi: 10.3866/PKU.WHXB201512242 shu

Electrochemical Behavior of Porous and Flat Silicon Electrode Interfaces

LÜ Jing-Mei ¹ ,
CHENG Xuan ^2,3,,

1.
1 College of Chemical Engineering and Materials Science, Beijing Institute of Technology, Zhuhai 519088, Guangdong Province, P. R. China;
2.
2 Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005, Fujian Province, P. R. China;
3.
3 Fujian Key Laboratory of Advanced Materials, Xiamen 361005, Fujian Province, P. R. China

Corresponding author: CHENG Xuan,
Received Date: 9 October 2015
Available Online: 22 December 2015
Fund Project: 国家自然科学基金(11372263)资助项目 (11372263)

The electrochemical responses of heavily doped n-type single-crystal silicon (CSi) during the formation of porous silicon (PSi) layers in hydrofluoric acid-based electrolytes were investigated. A series of PSi layers were fabricated by constantly applying different anodic current densities, which were selected according to the linear polarization curve. The surface and cross-sectional morphologies of the PSi layers were studied by scanning electron microscopy. The electrochemical behavior of CSi and PSi electrodes was compared by linear sweep polarization and chronopotentiometry techniques. The important parameters associated with the electrochemical reactions at the electrodes were evaluated by analyzing the Tafel plots and chronopotentiograms obtained before and after the PSi formation. Structural models of the CSi electrode/electrolyte and PSi electrode/ electrolyte interfaces were suggested based on the experimental data. Accordingly, the interfacial characteristics of CSi and PSi electrodes were discussed.
- Porous silicon,
- Silicon electrode interface,
- Corrosion rate,
- Open circuit potential,
- Polarization curve,
- Interface electrochemistry
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