Citation: LIU Jin-Long, LIU Sheng, GUO Jian-Chao, HUA Chen-Yi, CHEN Liang-Xian, WEI Jun-Jun, HEI Li-Fu, WANG Jing-Jing, FENG Zhi-Hong, LIU Qing, LI Cheng-Ming. Formation Mechanism of the H-terminated Diamond Surface[J]. Acta Physico-Chimica Sinica, ;2015, 31(9): 1741-1746. doi: 10.3866/PKU.WHXB201508031 shu

Formation Mechanism of the H-terminated Diamond Surface

1.
1 Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, P. R. China;
2 Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, P. R. China;
3 School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China

Received Date: 7 January 2015
Available Online: 3 August 2015
Fund Project: 国家自然科学基金(51402013) (51402013) 中国博士后科学基金(2014M550022) (2014M550022) 中央高校基本科研业务费(FRF-TP-14-042A1) (FRF-TP-14-042A1)

Microwave hydrogen plasma was used to introduce hydrogen termination on the diamond surface. Optical emission spectroscopy (OES) and diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) were used to characterize the active radicals in the plasma and the concentration of H-termination on the diamond surface, respectively. Thermal hydrogenation treatment carried out by hot filament heat in a hydrogen atmosphere was also proposed for incorporation of H-termination on the diamond surface. The results showed that the CH radical content in the microwave plasma and the H-termination concentration on the diamond surface after microwave plasma treatment were both facilitated by increasing the substrate temperature, plasma density, and input power. Interestingly, thermal hydrogenation treatment can produce Htermination on the diamond surface compared with to a similar extent to microwave plasma treatment. These observations show that the crucial factor for forming the H-terminated diamond surface is the surface chemical reaction controlled by temperature, rather than the plasma etching effect. When the temperature is above 500 ℃, C=O bonds on the O-terminated diamond surface decompose to CO and leave dangling bonds, which then connect with atomic or molecular hydrogen.
- Microwave hydrogen plasma,
- Diamond,
- H-termination,
- O-termination
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