Citation: QIAO Zhi, XIE Xin-Jian, XUE Jun-Ming, LIU Hui, LIANG Li-Min, HAO Qiu-Yan, LIU Cai-Chi. Optimization of Intrinsic Silicon Passivation Layers in nc-Si:H/c-Si Silicon Heterojunction Solar Cells[J]. Acta Physico-Chimica Sinica, ;2015, 31(6): 1207-1214. doi: 10.3866/PKU.WHXB201504142 shu

Optimization of Intrinsic Silicon Passivation Layers in nc-Si:H/c-Si Silicon Heterojunction Solar Cells

1.
1 Engineering Laboratory of Photoelectric Functional Crystals in Hebei Province, Hebei University of Technology, Tianjin 300130, P. R. China;
2 Institue of Applied Physics, Department of Mathematics and Physics, Shijiazhuang Tiedao University, Shijiazhuang 050043, P. R. China;
3 China Hisun PV Technology Co., Ltd., Hengshui 053000, Hebei Province, P. R. China

Received Date: 5 January 2015
Available Online: 14 April 2015
Fund Project: 国家高技术研究发展计划项目(863) (2012AA050301) (863) (2012AA050301)河北省教育厅科研计划项目(Z2010304)资助 (Z2010304)

A series of intrinsic silicon thin films were prepared using radio- frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at low temperature and low power density. We investigated the influence of silane concentration (C_S) on the structural, optical, and electronic properties, and passivation quality of the intrinsic silicon films, and the performances of hydrogenated nanocrystalline silicon/crystalline silicon (nc-Si:H/ c-Si) silicon heterojunction (SHJ) solar cells. The results show that with decreasing silane concentration, substantial changes in the crystalline volume fraction, hydrogen concentration, structure factor, optical bandgap, and photosensitivity of the film take place in the transition zone. The passivation quality of intrinsic silicon thin films is decided by the hydrogen content and bonding structure of the film. Films close to the transition zone show od compactness and photosensitivities, high hydrogen content, and low state densities, and contain abundant SiH bonds. The films provide excellent passivation for c-Si surfaces and significantly enhance the open-circuit voltages of nc-Si:H/c-Si SHJ solar cells. However, the passivation quality deteriorates seriously when the film is too thin. In this work, the optimum silane concentration was found to be 6% (molar fraction). By optimizing the film thickness of the passivation layers with C_S=6%, we obtained an nc-Si:H/c-Si SHJ solar cell with an open-circuit voltage of 672 mV, short-circuit current density of 35.1 mA·cm^-2, fill factor of 0.73, and efficiency of 17.3%.
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