Citation: LI Xu, ZOU Zhi-Qiang, LIU Xiao-Yong, LI Wei. Structure and Orientation Analysis of Iron Silicide Epitaxially Grown on Si Substrates[J]. Acta Physico-Chimica Sinica, ;2014, 30(7): 1370-1376. doi: 10.3866/PKU.WHXB201405061 shu

Structure and Orientation Analysis of Iron Silicide Epitaxially Grown on Si Substrates

LI Xu ^1,2 ,
ZOU Zhi-Qiang ^1,2, ,
LIU Xiao-Yong ¹ ,
LI Wei ¹

1.
1. Instrumental Analysis Center, Shanghai Jiao Tong University, Shanghai 200240, P. R. China;
2. Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, P. R. China

Received Date: 24 February 2014
Available Online: 6 May 2014
Fund Project:

Iron silicides were grown on Si(110) and Si(111) substrates by the molecular beam epitaxy method at 650-920 ℃ and 920 ℃, respectively. Scanning tunneling microscopy observation showed that only nanowires (NWs) formed on Si(110), and the dimensions of the NWs increased with increasing growth temperature. The sizes of the NWs grown at 920 ℃ reached ~80 nm high, ~250 nm wide, and several μm long, and were much larger than NWs grown at 650 ℃, indicating that high temperature was favorable for NW growth. Electron backscatter diffraction characterization identified that the crystal structure of the NWs grown at 920 ℃ was β-FeSi₂ with a single orientation of β-FeSi₂(101)//Si(111)), β-FeSi₂[010]//Si[110]. Iron silicides grown on Si(111) at 920 ℃ formed three-dimensional (3D) islands and ultra-thin films. The 3D islands were identified as the Fe₂Si phase with hexa nal crystal structure and space group 164, and the cell constants at room temperature were a=0.405 nm and c=0.509 nm. The orientation relationship between the Fe₂Si phase and the Si(111) substrate was Fe₂Si(001)//Si(111), Fe₂Si[120]//Si[112].
- Scanning tunneling microscopy,
- Electron backscatter diffraction,
- Iron silicide,
- Nanowire,
- Three-dimensional island,
- Structure,
- Orientation relationship
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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Structure and Orientation Analysis of Iron Silicide Epitaxially Grown on Si Substrates

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通讯作者: 陈斌, bchen63@163.com