Citation:
YAN Wei-Ping, WANG De-Jun, CHEN Li-Ping, LU Yong-Chun, XIE Teng-Feng, LIN Yan-Hong. Properties and Photoelectrocatalytic Activity of In2O3-Sensitized ZnO Nanorod Array[J]. Acta Physico-Chimica Sinica,
;2013, 29(05): 1021-1027.
doi:
10.3866/PKU.WHXB201303043
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In2O3-sensitized ZnO nanorod array films were prepared in a two-step aqueous process on fluorine-doped tin oxide (FTO) substrates. Field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), field-induced surface photovoltage (FISPV), and UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS) were used to characterize films. The influence of In2O3 content on the transfer characteristics of photoinduced charge carriers is discussed based on photovoltage response. The photoelectrocatalytic degradation efficiency of In2O3-sensitized ZnO nanorod array films was monitored using UV-Vis spectrometer. The photoelectrocatalytic activity of ZnO nanorod array and In2O3-sensitized ZnO nanorod array were evaluated from the degradation efficiency of rhodamine B (RhB). The effect of the In2O3-sensitized ZnO heterostructure on photoinduced electrons was investigated using the electrochemical workstation and the relationship between the photoinduced electron behavior and the photoelectrocatalytic process. Aqueous RhB was more efficiently degraded by the In2O3-sensitized ZnO nanorod array (visible light, applied bias voltage, 2 h), and the efficiency of the In2O3-sensitized array (95%) was 1.4 times higher than that of pure ZnO.
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