Citation: ZHU Jun, ZHANG Yao-Hong, HU Lin-Lua, DAI Song-Yuan. Preparation of In2S3 Sensitized Solar Cells with Chemical Bath Deposition and Their Performance[J]. Acta Physico-Chimica Sinica, ;2013, 29(01): 89-94. doi: 10.3866/PKU.WHXB201211092 shu

Preparation of In2S3 Sensitized Solar Cells with Chemical Bath Deposition and Their Performance

  • Received Date: 9 October 2012
    Available Online: 9 November 2012

    Fund Project: 国家重点基础研究发展规划(973)(2011CBA00700) (973)(2011CBA00700) 国家高技术研究发展计划(863)(2011AA050527) (863)(2011AA050527)国家自然科学基金(21003130, 21103197, 21173227, 21173228)资助项目 (21003130, 21103197, 21173227, 21173228)

  • In2S3 is a stable semiconductor material with low toxicity. We prepared In2S3 sensitized solar cells using low-cost chemical bath deposition methodology. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) were used to reveal the microstructure of the In2S3 sensitized TiO2 nanoporous films. Our results indicated that the deposition temperature has a remarkable effect on the morphology of In2S3 sensitized TiO2 films, which in turn affects the photovoltaic performance of devices. When the deposition temperature was low, the deposition reaction rate was slow, resulting in only minimal deposition. However, if the deposition temperature was increased too much, there was insufficient time for the In2S3 to be deposited within the internal pore structure of the TiO2 mesoporous films. The best homogeneous In2S3 sensitized TiO2 films were obtained with a deposition temperature of 40℃. At this temperature, the optical absorption of the resulting film was optimal and displayed the largest short circuit current density among the films examined. Moreover, the fill factor was also the best, approaching 65%. The best overall power conversion efficiency was 0.32%.

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