Citation: ZHANG Chao, AO Jian-Ping, WANG Li, JIANG Tao, SUN Guo-Zhong, HE Qing, ZHOU Zhi-Qiang, SUN Yun. Electrodepositied Gallium on Gallium and Copper/Indium Substratess[J]. Acta Physico-Chimica Sinica, ;2012, 28(08): 1913-1922. doi: 10.3866/PKU.WHXB201205153 shu

Electrodepositied Gallium on Gallium and Copper/Indium Substratess

1.
Key Laboratory of Optoelectronic Information Technology, Ministry of Education, Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Institute of Photo-Electronic Thin FilmDevices and Technique, Nankai University, Tianjin 300071, P. R. China

Received Date: 29 March 2012
Available Online: 15 May 2012
Fund Project: 教育部博士点基金(20090031110031)资助项目 (20090031110031)

We investigate the electrodeposition of gallium metallic precursor on gallium and Cu/In substrates from acidic aqueous solutions. The effect of the supporting electrolyte and the solution pH value for the electrodeposition of Ga is investigated by cyclic voltammetry. During Ga electrodeposition, gallium gradually diffuses into the film, and reacts with CuIn alloy to produce CuGae₂ at the Cu/In interface. We use triethanolamine to protect the Cu/In and Ga films from being oxidized, and thus this improves the current efficiency of Ga-electrodeposition. The Cu-In-Ga films are annealed in an Se atmosphere to produce In_1-xGa_xSee₂(CIGS) thin films with high quality, and the efficiency of the solar cell prepared using these films is 9.42%.
- Electrodeposition,
- Cu(In_1-xGa_x)Se₂,
- Cyclic voltammetry,
- Metallic precursor,
- Solar cell
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