Citation: SHEN Li-Ying, WU Xiao-Ming, HUA Yu-Lin, DONG Mu-Sen, YIN Shou-Gen, ZHENG Jia-Jin. Improving the Efficiency of Blue Organic Light-Emitting Diodes by Employing Cs-Derivatives as the n-Dopant[J]. Acta Physico-Chimica Sinica, ;2012, 28(06): 1497-1501. doi: 10.3866/PKU.WHXB201203273 shu

Improving the Efficiency of Blue Organic Light-Emitting Diodes by Employing Cs-Derivatives as the n-Dopant

1.
1. Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory of Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China;
2. College of Optoelectronics Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, P. R. China

Received Date: 28 December 2011
Available Online: 27 March 2012
Fund Project: 国家自然科学基金(60906022, 60676051) (60906022, 60676051) 天津市自然科学基金(10JCYBJC01100) (10JCYBJC01100) 天津市教委科学发展基金(2011ZD02) (2011ZD02)江苏省高校自然科学发展基金(09KJB140006)资助项目 (09KJB140006)

The efficiency of organic light-emitting diodes (OLEDs) was markedly improved using the novel electron transporting material 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (NBPhen) doped with Cs-derivatives including cesium carbonate (Cs₂CO₃) and cesium acetate (CH₃COOCs) as the n-type dopant. The operating voltage of devices containing these materials as an n-type electron transporting layer (n-ETL) was significantly reduced. Optimized devices with Cs₂CO₃-doped or CH₃COOCsdoped n-ETL (ITO/β-NPB/CBP:5%(w) N-BDAVBi/NBPhen/NBPhen:Cs₂CO₃ (or CH₃COOCs)/Al) exhibited excellent electroluminescent performance with current densities of 551.80 and 527.88 mA·cm^-2 at 14 V, corresponding brightnesses of 39750 and 39820 cd·m^-2, and current efficiencies of 14.60 and 14.40 cd· A^-1 at 10000 cd·m^-2, respectively. These results were superior to that of conventional device (ITO/β-NPB/ CBP:5%(w)N-BDAVBi/NBPhen/Cs₂CO₃/Al) without an n-ETL, which exhibited a current density of 312.39 mA·cm^-2 at 14 V, corresponding brightness of 25190 cd·m^-2, and current efficiency of 9.45 cd·A^-1 at 10000 cd·m^-2. In addition, the reason for the increase in the efficiency of n-type doped devices has been analyzed based on the concept of the doping mechanism in organic semiconductors and the energy level scheme of the devices.
- Organic light-emitting diodes,
- Cs₂CO₃,
- CH₃COOCs,
- n-Type electron transporting layer,
- Electroluminescent performance
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