Citation: HU Wen-Liang, XU Gang, MA Jian-Wei, XIONG Bin, SHI Ji-Fu. Optical and Phase Transition Properties of TixV1-xO2 Thin Films[J]. Acta Physico-Chimica Sinica, ;2012, 28(06): 1533-1538. doi: 10.3866/PKU.WHXB201203191 shu

Optical and Phase Transition Properties of TixV1-xO2 Thin Films

  • Received Date: 13 December 2011
    Available Online: 19 March 2012

    Fund Project: 国家自然科学基金(51102235) (51102235) 广东省产学研结合计划(2010B090400109) (2010B090400109)广东省中国科学院全面战略合作计划(2011B090300044)资助项目 (2011B090300044)

  • TixV1-xO2 (0≤x≤1) thin films with different molar ratios of V/Ti were prepared on c-plane sapphire (0001) substrates by radio frequency magnetron sputtering. The microstructure and optical properties of the thin films were determined by X-ray diffraction (XRD), Raman spectroscopy, and UV-visible-near infrared (UV-Vis-NIR) spectroscopy. The width of the optical band gap was calculated and the integrated solar transmittance of the films was characterized. As the content of titanium was increased, infrared regulation and thermal hysteresis were gradually reduced until they disappeared. The results show that the band gap of the thin films broadens as the content of titanium increases, causing the optical absorption edge to exhibit a blue shift. Conversely, the band gap narrows as the proportion of vanadium is increased, which causes a red shift of the optical absorption edge.
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