Citation: SUN Qiu-Jian, DONG Gui-Fang, ZHENG Hai-Yang, ZHAO Hao-Yan, QIAO Juan, DUAN Lian, WANG Li-Duo, ZHANG Fu-Shi, QIU Yong. Indolium Squarine Semiconductor for Field-Effect Transistors[J]. Acta Physico-Chimica Sinica, ;2011, 27(08): 1893-1899. doi: 10.3866/PKU.WHXB20110832 shu

Indolium Squarine Semiconductor for Field-Effect Transistors

1.
Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China

Received Date: 11 May 2011
Available Online: 24 June 2011
Fund Project: 国家自然科学基金(60877026, 50990062) (60877026, 50990062)国家重点基础研究发展规划 (973) (2009CB930602)资助项目 (973) (2009CB930602)

An indolium squarine 1,3-bis[(3,3-dimethylindolin-2-ylidene)methyl]squaraine was investigated as a semiconductor for use in organic field-effect transistors. Intramolecular charge separation and face to face packing were found by X-ray crystallography. p-Type thin film transistors were fabricated on Si/SiO₂ substrates by thermal evaporation and spin-coating. By channel state research we found that annealing could improve the polycrystallization of the semiconductor film from the amorphous state and device mobility improved from 10^-5 to 10^-5 cm²·V^-1·s^-1. The highest mobility of 7.8×10^-2 cm²·V^-1·s^-1 was achieved in a top contact single crystal device. ISQ transistors were also stable in air without encapsulation.
- Squarylium inner salt,
- Organic transistor,
- Spin coating,
- Single crystal,
- Annealing
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