Citation: WEN Zhen-Li, CAO Xiao-Ning, ZHOU Chun-Lan, ZHAO Lei, LI Hai-Ling, WANG Wen-Jing. Influence of Deposition Temperature on the SiN_x:H Film Prepared by Plasma Enhanced Chemical Vapor Deposition[J]. Acta Physico-Chimica Sinica, ;2011, 27(06): 1531-1536. doi: 10.3866/PKU.WHXB20110632 shu

Influence of Deposition Temperature on the SiN_x:H Film Prepared by Plasma Enhanced Chemical Vapor Deposition

1.
Key Laboratory Solar Thermal Energy and Photovoltaic Systems, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, P. R. China

Received Date: 18 January 2011
Available Online: 10 May 2011
Fund Project: 国家高技术研究发展计划(2007AA052437) (2007AA052437)中国科学院知识创新工程重要方向项目(KGCX2-YW-382)资助 (KGCX2-YW-382)

Hydrogenated silicon nitride films were prepared on the p-type polished silicon substrates by the direct plasma enhanced chemical vapor deposition (PECVD). The influences of deposition temperature on the composition, optical characteristics, structural characteristics, and passivation characteristics of the SiN_x:H film were studied. All the solar cell devices were fabricated using industrial state-of-art crystal silicon solar cell technology. The influence of deposition temperature on the as-fabricated cell's electrical performance is demonstrated. The refractive index of the film ranges from 1.926 to 2.231 and it increases with an increase in the deposition temperature. This shows that the Si/N mole ratio also increases with deposition temperature. The Si－H bond and the N－H bond break and form a new Si－N bond when the deposition temperature is higher. This increase in the Si－N concentration results in an increase in film density. The effective minor carrier lifetime of the coated wafer increases initially with the substrate temperature. At a temperature of 450 °C the effective minor carrier lifetime begins to decrease. This phenomenon can be explained by H extraction from the film. For all the samples, the effective minor carrier lifetime degrades with time. The SiN_x:H film prepared at a deposition temperature of 450 °C shows the best anti-reflection and surface passivation properties. The electrical performance of the fully functional solar cells is also demonstrated and the optimized results are highlighted and discussed.
- SiN_x：H thin film,
- Deposition temperature,
- Structural property,
- Passivation,
- Solar cell,
- Efficiency
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1.
沈阳化工大学材料科学与工程学院沈阳 110142

Influence of Deposition Temperature on the SiNx:H Film Prepared by Plasma Enhanced Chemical Vapor Deposition

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通讯作者: 陈斌, bchen63@163.com

Influence of Deposition Temperature on the SiN_x:H Film Prepared by Plasma Enhanced Chemical Vapor Deposition