Citation: PENG Yue-Hua, ZHOU Hai-Qing, LIU Xiang-Heng, HE Xiong-Wu, ZHAO Ding, HAI Kuo, ZHOU Wei-Chang, YUAN Hua-Jun, TANG Dong-Sheng. Preparation of Sn₂S₃ One-Dimensional Nanostructure Arrays by Chemical Vapor Deposition[J]. Acta Physico-Chimica Sinica, ;2011, 27(05): 1249-1253. doi: 10.3866/PKU.WHXB20110430 shu

Preparation of Sn₂S₃ One-Dimensional Nanostructure Arrays by Chemical Vapor Deposition

1.
Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, P. R. China

Received Date: 25 October 2010
Available Online: 14 March 2011
Fund Project: 教育部新世纪优秀人才支持计划(NCET-07-0278) (NCET-07-0278)湖南省杰出青年基金(08JJ1001) (08JJ1001)湖南省自然科学基金(07JJ6009) (07JJ6009)湖南师范大学青年优秀人才培养计划(070623)资助 (070623)

We prepared large-area, vertically aligned Sn₂S₃ one-dimensional nanostructure arrays using tin and sulfur powder as reactants on a lead-plated silicon substrate by chemical vapor deposition (CVD). Scanning electron microscopy (SEM) showed that these Sn₂S₃ nanowires had diameters around 100 nm and lengths of several microns. X-ray diffraction (XRD) results indicated that the obtained Sn₂S₃ nanowires were composed of an orthorhombic phase with very od crystallinity, and grow in the [002] direction. Ultraviolet-visible (UV-Vis) diffuse reflectance spectroscopy revealed that they are direct-bandgap semiconductors with a bandgap of 2.0 eV. The growth of Sn₂S₃ nanowires is verned by the vapor-solid (V-S) growth mechanism, and the Pb atoms present in the lattice as substitutional atoms instead of on the tips of nanowires as catalyst particles.
- One-dimensional nanostructure,
- Array,
- Chemical vapor deposition,
- Sn₂S₃,
- Vapor-solid growth mechanism
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沈阳化工大学材料科学与工程学院沈阳 110142

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Preparation of Sn₂S₃ One-Dimensional Nanostructure Arrays by Chemical Vapor Deposition