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Citation: XU Hao, LU Fang, FU Zheng-Wen. Effects of Substrate-Target Distance and Si Co-Doping on the Properties of Al-Doped ZnO Films Deposited by Magnetron Sputtering[J]. Acta Physico-Chimica Sinica, ;2011, 27(05): 1232-1238. doi: 10.3866/PKU.WHXB20110422 shu

Effects of Substrate-Target Distance and Si Co-Doping on the Properties of Al-Doped ZnO Films Deposited by Magnetron Sputtering

XU Hao ^1,2 ,
LU Fang ¹ ,
FU Zheng-Wen ^2,

1.
1. Shanghai Key Laboratory of Molecular Catalysts and Innovative Materials, Surface Physics Laboratory & Department of Physics, Fudan University, Shanghai 200433, P. R. China;
2. Department of Chemistry & Laser Chemistry Institute, Fudan University, Shanghai 200433, P. R. China

Received Date: 20 December 2010
Available Online: 10 March 2011
Fund Project: 上海科学技术委员会(08DZ2270500, 09JC1401300) (08DZ2270500, 09JC1401300) 国家自然科学基金(20773031) (20773031) 国家重点基础研究发展规划(973) (2007CB209702) (973) (2007CB209702) 国家高技术研究发展计划(863) (2007AA03Z322)资助项目 (863) (2007AA03Z322)

Transparent conductive Al-doped ZnO (AZO) and Si-codoped AZO (AZO:Si) films were deposited on square quartz substrates by radio frequency (RF) magnetron sputtering. The effect of distance between the substrate and target (D_st) and the effect of co-doping Si on the electrical and optical properties of the AZO films were systematically investigated. The resistivity, carrier concentration, and mobility were found to be strongly dependent on the D_st values. With a decrease in D_st, the carrier concentration and mobility increased significantly, which resulted in improved conductivity. The lowest resistivity of 4.94×10^-4 Ω·cm was obtained at a D_st of 4.5 cm, and this was associated with a carrier concentration of 3.75×10²⁰ cm^-3 and a mobility of 33.7 cm²·V^-1·s^-1. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) spectroscopy, and grain boundary scattering models were used to analyze the relationship between the carrier concentration and the mobility at different deposition (D_st) values. Transmittance spectra showed an average transmittance of >93% in the visible-near infrared range for all the samples and a blue shift of the absorption edge with a decrease in D_st. AZO:Si films had high-conductance and high-transmittance optical properties compared with AZO films, and they had better resistivity stability than the AZO films when exposed to a hot and damp atmosphere, which is practically meaningful.
- AZO,
- AZO:Si,
- Substrate-target distance,
- Radio frequency magnetron sputtering
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