Citation: LIAO Cheng, HAN Jun-Feng, JIANG Tao, XIE Hua-Mu, JIAO Fei, ZHAO Kui. Effect of Se Vapor Concentration on CIGS Film Preparation[J]. Acta Physico-Chimica Sinica, ;2011, 27(02): 432-436. doi: 10.3866/PKU.WHXB20110231 shu

Effect of Se Vapor Concentration on CIGS Film Preparation

1.
State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, P. R. China

Received Date: 3 November 2010
Available Online: 7 January 2011
Fund Project: 北京市自然科学基金(H030630010120)资助项目 (H030630010120)

We applied the “selenization of stack element layers” method to the preparation of CuIn_1-xGa_xSe₂ (CIGS) films. The selenium vapor concentration was precisely controlled to optimize the annealing process using a homemade bilayer tubular selenization facility, and its effect on the photoelectric characteristics of the films was studied. Auger electron spectroscopy (AES) and X-ray diffraction (XRD) were used to analyze the composition distribution in the cross-section and to obtain phase information, respectively. The output performance of the CIGS device was also measured under AM1.5 1000 W·m^-2 illumination. The results indicated that the molybdenum back contact layer was seriously degraded by the saturated selenium vapor during annealing. Annealing with a low concentration of selenium vapor led to bad performance because of segregation and defects in the film. The CIGS film was homogeneous after annealing in a selenium-free inert atmosphere and a conversion efficiency of 8.5% was obtained.
- Bi-layer tubular selenization facility,
- Selenization of stack element layer,
- Saturated selenium vapor,
- Annealing,
- Segregation
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沈阳化工大学材料科学与工程学院沈阳 110142