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Citation: ZHAO Jing-Mao, GU Feng, ZHAO Xu-Hui, ZUO Yu. Semiconductor Properties of Anodic Oxide Film Formed on Aluminum[J]. Acta Physico-Chimica Sinica, ;2008, 24(01): 147-151. doi: 10.3866/PKU.WHXB20080126 shu

Semiconductor Properties of Anodic Oxide Film Formed on Aluminum

1.
College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, P. R. China

Received Date: 17 July 2007
Available Online: 12 November 2007

The semiconductor properties of anodic oxide film formed on commercial pure aluminum were analyzed usingMott-Schottky theory and point defect model (PDM). The donor density, oxygen vacancy diffusion coefficient and flat-band potential were measured for the oxide films sealed by boiling water and K2Cr2O7, respectively. The results indicated that the anodic oxide films showed the n-type semiconductor property and the donor density decreased exponentially with the voltage elevating. The value of oxygen vacancy diffusion coefficient is about (1.12-5.53)伊10-14 cm-2·s-1. The flat-band potential of anodic oxide filmdeclined after sealing.
- Commercial pure aluminum; Anodic oxide film; Semiconductor; Mott-Schottky plot
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