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Citation: LI Qing, YU Jun-Sheng, LI Lu, JIANG Ya-Dong, SUO Fan, ZHAN Xiao-Wei. Organic Light-Emitting Diodes Based on New Silole Derivatives[J]. Acta Physico-Chimica Sinica, ;2008, 24(01): 133-137. doi: 10.3866/PKU.WHXB20080123 shu

Organic Light-Emitting Diodes Based on New Silole Derivatives

1.
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China; Organic Solid Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080, P. R. China

Received Date: 26 June 2007
Available Online: 29 October 2007

Two light emissive organic light-emitting diodes (OLEDs) of high performance were prepared by vacuum thermal evaporation using two kinds of silole derivatives 1,2-bis (1-methyl-2,3,4,5-tetraphenyl-1H-silole-1-yl)ethane (BMPSiE) and 1,1’-dimethyl-3,3’,4,4’-tetraphenyl-2,2’,5,5’-tetra(thiophen-2-yl)-1,1’-bi(1H-silole) (BMPThSi) as emitting materials, N, N’-diphenyl-N,N’-bis(3-methylphenyl)-1,1’-biphenyl-4,4’-diamine(NPB) and tris(8-hydroxyquinolinolato) aluminum(Alq3) as hole transporting layer (HTL) and electron transporting layer (ETL), respectively. The luminance-voltage and current density-voltage characteristics of devices were investigated, and the difference between their performances was discussed. The results demonstrate that at a bias voltage of 20 V, the device consisting of novel emissive material BMPSiE had a maximum luminance of 9991.9 cd·m-2 and the device of BMPThSi had a maximumluminance of 15261.5 cd·m-2. The peaks of electroluminescence (EL) spectra were located at 483 and 495 nm, respectively, which were in od accordance with the photoluminescent characteristics. The Commissions International d’Eclairage (CIE) coordinates were located at (0.202, 0.337) and (0.246, 0.419), which were independent on the variation of forward bias.
- OLEDs; Silole; Vacuumthermal evaporation; Energy level; Devices performance
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