Citation: WEI Ying-Jin, LI Xu, WANG Chun-Zhong, ZHAN Shi-Ying, CHEN Gang. Preparation and Electrochemical Properties of Cu Doped V2O5[J]. Acta Physico-Chimica Sinica, ;2007, 23(07): 1090-1094. doi: 10.3866/PKU.WHXB20070724
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Crystalline Cu0.04V2O5 was prepared by precipitation method followed by heat treatment at 300 and 600 ℃. The material prepared at 300 ℃ showed porous morphology, whereas that prepared at 600 ℃ was highly crystalline. X-ray diffraction showed both materials exhibiting the same orthorhombic structure as that of V2O5. Fourier transform infrared spectroscopy confirmed the existence of ca 0.18 mol of absorbed water in one mol of the material prepared at 300 ℃electrochemical performance of V2O5. The material prepared at 600 ℃ had a reversible discharge capacity over 160 mAh·g-1 after 60 cycles at the current density of C/5.6. The material prepared at 300 ℃ showed od cycling performance at higher current densities, with a reversible capacity ca 100 mAh·g-1 when cycled at C/1.9. The discrepancy in the rate performance of Cu0.04V2O5 was attributed to the morphology of materials.
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