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Citation: Wang Li, Yin Mu-Sheng, Zhu Yong-Fa. A Study of Interface Diffusion and Reaction of Ti/ZrN₂/Si Film[J]. Acta Physico-Chimica Sinica, ;2003, 19(07): 641-646. doi: 10.3866/PKU.WHXB20030715 shu

A Study of Interface Diffusion and Reaction of Ti/ZrN₂/Si Film

1.
Department of Chemistry, Tsinghua University, Beijing　100084

Received Date: 26 December 2002
Available Online: 15 July 2003

Ti/ZrN2 multiplayer was deposited on silicon wafer using DC magnetron sputtering method. Interface diffusion and chemical states at interfaces were investigated using line shape analysis along with depth profile analysis of Auger electron spectroscopy (AES). Interface diffusion was performed during deposition of thin film and can be intensified by thermal treatment in vacuum. Interface reaction also can be promoted by thermal treatment, and TiNx and SiNx species were formed at interface respectively.
- Interface diffusion and reaction;Ti/ZrN₂/Si;Auger electron spectroscopy(AES)
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沈阳化工大学材料科学与工程学院沈阳 110142

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通讯作者: 陈斌, bchen63@163.com

A Study of Interface Diffusion and Reaction of Ti/ZrN₂/Si Film