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Citation: Lei Xiao-Jun, Chen Hai-Feng, Liu Zhong-Fan. Comparative about the STM Thermochemical Hole Burning of DEA(TCNQ)₂ and TEA(TCNQ)₂[J]. Acta Physico-Chimica Sinica, ;2001, 17(09): 769-772. doi: 10.3866/PKU.WHXB20010901 shu

Comparative about the STM Thermochemical Hole Burning of DEA(TCNQ)₂ and TEA(TCNQ)₂

1.
Center of Nanoscale Science ＆ Technology,College of Chemistry and Molecular Engineering,Peking University,Beijing　100871

Received Date: 17 April 2001
Available Online: 15 September 2001

The thermochemical hole burning properties of two different charge transfer complexes,DEA(TCNQ)2 and TEA(TCNQ)2,were studied in this work.It shows that the data writing on DEA(TCNQ)2 needs a larger threshold voltage compared with TEA(TCNQ)2,and that the DEA(TCNQ)2 gives a smaller hole size and a higher depth/diameter ratio,demonstrating the possibility of optimizing the storage performance with a suitable molecular design.
- STM;Data storage;Thermochemical Hole Burning;Storage material
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Comparative about the STM Thermochemical Hole Burning of DEA(TCNQ)2 and TEA(TCNQ)2

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Comparative about the STM Thermochemical Hole Burning of DEA(TCNQ)₂ and TEA(TCNQ)₂