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Citation: Liu Bing, ng Zheng-Lie, Yao Su-Wei, Guo He-Tong, Yuan Hua-Tang, Zhang Yun-shi. Preparation of Cu/Co Layer Film by Electrodeposition on Semiconductor Silicon[J]. Acta Physico-Chimica Sinica, ;1999, 15(04): 356-360. doi: 10.3866/PKU.WHXB19990413 shu

Preparation of Cu/Co Layer Film by Electrodeposition on Semiconductor Silicon

1.
Institute of New Energy Material Chemistry,Nankai University,Tianjin 300071

Received Date: 4 June 1998
Available Online: 15 April 1999

The Cu/Co layer film on the semiconductor silicon was obtained by electrodeposition for the first time. The results of current - time transient curves and STM image showed that the wt of Cu film is two-dimensional while an island three-dimension growth for the Co film was formed. The addition of CrO3 changed the current - time transient curves, and affected the growth of crystal. The addition of CrO3 decreased the nucleation rate of Cu, while it changed the shape of current-time transient curves of the deposition of Co at higher deposition potentials. For the deposition of Co, addition of CrO3 can form the adhesive film [Co. xCr2O3' YH2O]ad or [CoOH. nCr(OH)3]ad, which decreased the nucleation rate of Co.
- p-Si,
- Electrodeposition,
- Cu/Co layer film
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