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Citation:
Deng Zong-Wu, Guo Wei-Min, Liu Huan-Ming, Cao Li-Li. Band Bending of Cleaved InP(110) Surface[J]. Acta Physico-Chimica Sinica,
;1999, 15(04): 303-307.
doi:
10.3866/PKU.WHXB19990404
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The dynamic surface band bending of cleaved InP(110) sample was investegated using in situ XPS analysis and the causes of band bending was discussed according to the experimental results. It was concluded that there is no intrinsic surface states in InP and neither the residual gas in UHV nor the X-Ray radiation causes the band bending, the band bending should be caused by the surface defects induced during the cleavage and lattice relaxation.
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Keywords:
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InP
, - Band bending,
- Dynamic process,
- XPS
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