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Citation: Zhang Guo-Qing, Liu Bing, Yao Su-Wei, Guo He-Tong, He Fei, ng Zheng-Lie. XPS Evidence for the Diffusion and Formation of Metal Silicide at Atmospheric Temperature on the Interface of NiPd/Si[J]. Acta Physico-Chimica Sinica, ;1997, 13(02): 164-168. doi: 10.3866/PKU.WHXB19970212 shu

XPS Evidence for the Diffusion and Formation of Metal Silicide at Atmospheric Temperature on the Interface of NiPd/Si

1.
Department of Applied Chemistry,Tianjin University,Tianjin 300072

Received Date: 25 June 1996
Available Online: 15 February 1997

Nickel-palladium film on p-Si prepared by potential -controlled electrodeposition has much better adherence than that deposited by other methods .To reveal the reasons of this effect, X-ray photoelectron spectroscopy (XPS) combined with Ar+ sputtering was used to investigate the interface of NiPd /Si. The results showed that dramatic interdiffusion of Ni, Pd and Si had occurred at atmospheric temperature. On the XPS spectra of nickel and palladium , there are two kinds of binding energy , contributed by pure metals and metal silicide respectively. NiSi, PdSi and Pd2Si were formed at the interface. Both of the electric field on the surface and the H atoms in the metal lattice have the possibility to promote reactions between nickel or palladium and silicon .
- XPS,
- NiPd/Si interface,
- Diffusion,
- Metal silicide
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